An 820-GHz Down-Converter With Fourth Subharmonic Mixer in 40-nm CMOS Technology

Zhou, Jie; Luo, Xun

doi:10.1109/lmwc.2021.3105578

Cited by 7 publications

(5 citation statements)

References 21 publications

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“…At frequencies above 420 GHz, noise figures of CMOS circuits increase with a slope of ~70 dB/decade due to the use of higher order subharmonic mixing [33], [37], [38]. The amplitude of frequency multiplied LO signal is not sufficiently high to properly switch devices due to the increased loss of high order frequency multiplication and operating frequency.…”

Section: B Noise Figure Of Receiver Rf Front-endsmentioning

confidence: 99%

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

Choi

Zhu

et al. 2023

IEEE Open J. Solid-State Circuits Soc.

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CMOS (Complementary Metal Oxide Silicon) integrated circuits (IC's) technology is emerging as a means for realization of capable and affordable systems that operate at frequencies near 300GHz and higher. This is lowering a key barrier for utilizing the sub-millimeter electromagnetic waves in everyday applications. Despite the fact that the unity maximum available gain frequency, f max of NMOS transistors (with connections to the tope metal layer) has peaked at ~320 GHz, signal generation up to 1.33 THz, coherent detection up to 1.2 THz and incoherent detection up to ~10 THz have been demonstrated using CMOS integrated circuits. Furthermore, highly integrated rotational spectroscopy transceivers operating at frequencies up to near 300 GHz, 300-GHz and 400-GHz concurrent transceiver pixels and arrays for high resolution radar imaging, and 300-GHz and 390-GHz transmitters, and 300-GHz receivers for high data-rate communication have been demonstrated in CMOS. The performances of these CMOS circuits are sufficient or close to being sufficient to support electronic smelling using rotational spectroscopy that can detect and quantify concentrations of a wide variety of gases; imaging that can enable operation in a wide range of visually impaired conditions; and high-bandwidth communication. Lastly, techniques for affordable packaging and testing sub-millimeter wave systems are suggested based on experimental demonstrations.

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Section: B Noise Figure Of Receiver Rf Front-endsmentioning

confidence: 99%

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

Choi

Zhu

et al. 2023

IEEE Open J. Solid-State Circuits Soc.

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“…The dynamic range of the radar MMIC is mainly influenced by the transmit power of the Tx path and the receive mixer in the Rx path. Subharmonic mixer architectures are often used for THz applications, as the receive signal frequency is above the transit frequency f T of the used technology [41][42][43]. Therefore, a subharmonic receive mixer architecture was implemented for this radar MMIC.…”

Section: Ghz Subharmonic Mixermentioning

confidence: 99%

A compact and fully integrated FMCW radar transceiver combined with a dielectric lens

Starke,

Bott,

Vogelsang

et al. 2023

Int. J. Microw. Wireless Technol.

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Electronic measurement systems in the THz frequency range are often bulky and expensive devices. While some compact single-chip systems operating in the high millimeter-wave frequency range have recently been published, compact measurement systems in the low THz frequency range are still rare. The emergence of new silicon-germanium (SiGe) semiconductor technologies allow the integration of system components, like oscillators, frequency multipliers, frequency dividers, and antennas, operating in the low THz frequency range, into a compact monolithic microwave integrated circuits (MMIC), which contains most components to implement a low-cost and compact frequency-modulated continuous-wave-radar transceiver. This article presents a single transceiver solution containing all necessary components. It introduces a $0.48\,\mathrm{THz}$ radar transceiver MMIC with a tuning range of $43\,\mathrm{GHz}$ and an output power of up to $-9.4\,\mathrm{dBm}$ in the SG13G3 $130\,\mathrm{nm}$ SiGe technology by IHP. The MMIC is complemented by a dielectric lens antenna design consisting of polytetrafluoroethylene, providing up to $39.3\,\mathrm d\mathrm B\mathrm i$ of directivity and half-power beam widths of 0.95∘ in transmit and receive direction. The suppression of clutter from unwanted targets deviating from antenna boresight more than 6∘ is higher than $24.6\,\mathrm d \mathrm B$ in E- and H-Plane.

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“…In addition to the transmit power of the Tx path, the mixer is mainly responsible for the dynamic range of the system. Recently, different subharmonic concepts in the THz region have been published using silicon technologies [21]- [23]. During the design of the mixer with the SG13G3 technology, it was investigated to what extent a fundamental mixer can be realized in this technology.…”

Section: ) 480 Ghz Subharmonic Mixermentioning

confidence: 99%

A Fully Integrated 0.48 THz FMCW Radar Transceiver MMIC in a SiGe-Technology

Starke

Wittemeier

Vogelsang

et al. 2022

2022 17th European Microwave Integrated Circuits Conference (EuMIC)

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An 820-GHz Down-Converter With Fourth Subharmonic Mixer in 40-nm CMOS Technology

Cited by 7 publications

References 21 publications

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

A compact and fully integrated FMCW radar transceiver combined with a dielectric lens

A Fully Integrated 0.48 THz FMCW Radar Transceiver MMIC in a SiGe-Technology

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