An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

Trotta, S.; Knapp, H.; Aufinger, Klaus; Meister, T.F.; Böck, J.; Dehlink, B.; Simbürger, W.; Scholtz, Arpad L.

doi:10.1109/jssc.2007.905227

Cited by 52 publications

(15 citation statements)

References 10 publications

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“…The voltage gain of the cascaded emitter-followers, as depicted in Fig. 2, has a frequency dependence that is similar to the frequency dependence of the transfer function of an RLC series resonance circuit [4]. This can be used to provide gain peaking at the desired frequency.…”

Section: Circuit Designmentioning

confidence: 96%

“…A lumped circuit configuration typically offers higher gain values and consumes less chip area at the cost of lower maximum output power. Broadband amplifiers based on lumped elements have been presented in [2], [3], [4], and [5] but do not deliver sufficient output power and occupy larger chip areas. In the following sections the analysis, design and measurement results of a fully integrated broadband amplifier based on lumped elements are presented.…”

Section: Introductionmentioning

confidence: 99%

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A 30GHz bandwidth driver amplifier with high output voltage swing for ultra-wideband localization- and sensor systems

Sewiolo

Rascher

Weigel

2008

2008 Asia-Pacific Microwave Conference

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This paper reports on the analysis, design and characterization of a 30 GHz lumped broadband driving amplifier for Ultra-Wideband localization and sensor systems. The circuit integrates a cascode differential stage, which is fed by two cascaded emitter-followers (EF). The differential gain is 10 dB with a gain flatness of ±1 dB in the desired frequency range. This amplifier exhibits an output 1-dB compression point of 12 dBm. The maximum differential output voltage swing is 3.2 V pp . The amplifier consumes a power of 560 mW at a supply voltage of ±3.3 V. The compact 0.5 mm 2 amplifier is manufactured in a low-cost 0.25 μm SiGe BiCMOS technology with a transit frequency of 75 GHz.

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Section: Circuit Designmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

A 30GHz bandwidth driver amplifier with high output voltage swing for ultra-wideband localization- and sensor systems

Sewiolo

Rascher

Weigel

2008

2008 Asia-Pacific Microwave Conference

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“…SiGe amplifier presented in [12] is a more wideband design but it results in a considerably higher NF (≥20 dB), occupies a larger die area and dissipates more DC power. The experimental results of the proposed differential (IF) amplifier design compare favourably also with some earlier reported single-ended silicon based wideband amplifier designs [13][14][15][16][17][18] in terms of achieving a higher/similar peak gain or more wideband input/output matching.…”

Section: Wwwietdlorgmentioning

confidence: 99%

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Reyaz

Malmqvist

Gustafsson

et al. 2015

IET Microwaves, Antennas & Propagation

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This study presents the results of a high-gain and wideband differential intermediate frequency (IF) amplifier circuit design for a W-band passive imaging single-chip (down-conversion) receiver front-end. The cascaded two-stage IF amplifier was fabricated in a 0.13 μm SiGe BiCMOS process technology with 300 GHz/500 GHz f T /f max . In total six on-chip inductors are used in the input, output and inter-stage matching networks which enable relatively broadband RF properties together with a compact circuit size for the IF amplifier (the die area is 0.27 mm 2 incl. RF and DC pads). The broadband SiGe amplifier has a measured gain of 10-19.5 dB at 2-37 GHz (|s 11 | and |s 22 | ≤ −10 dB at 7-40 GHz and 8-35 GHz, respectively), noise figure of 6.3-8.0 dB at 2-26 GHz and output third order intercept points of 7-17 dBm at 1-40 GHz (the DC power consumption is 122 mW). To the authors' best knowledge, this work reports a first-time realisation of a differential IF amplifier made in a 0.13 μm SiGe BiCMOS technology that achieves such wideband impedance matching together with a high gain and reasonably low noise properties over a wide instantaneous bandwidth (|s 21 | = 15-19.5 dB at 3-26 GHz).

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“…To meet these stringent requirements, first of all, the fast and low-noise, high-quality transistors are needed, which is of course the matter of the available technology. Traditionally, wideband microwave amplifiers relied on transistors realized with composite semiconductors, e.g., GaAs, because of the intrinsic superior frequency characteristics of such devices [1][2][3]. The second level of the challenge is the accurate analysis performance capabilities of the chosen transistor to obtain the feasible design target space, then is to design the microwave amplifier subject to the feasible design target space [4].…”

Section: Introductionmentioning

confidence: 99%

Memetic optimization algorithm applied to design microwave amplifier for the specific gain value constrained by the minimum noise over the available bandwidth

Cengiz

Kılıç

2010

Int J RF and Microwave Comp Aid Eng

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In this work, the neural performance and fuzzy logic data sheets of the transistor are used to determine the feasible design target space in the optimization of a microwave amplifier. The compatible (Noise F, Input VSWR V i , Gain G T ) triplets and their (Z S , Z L ) terminations of a microwave transistor are exploited for an amplifier design with the minimum noise F min (f), required gain G Treq (f), and a low input VSWR V i over the available bandwidth. The multi-objective design procedure is obtained from Z S (f), Z L (f) terminations with the unit-elements and short-circuited stubs in the LþL configurations and memetic optimization algorithm is successfully implemented as an optimization tool. A typical design example is given with its challenging performance in the simple LþL configurations realizable by the microstrip line technology. V C 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE 20:546-556, 2010.

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An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

Cited by 52 publications

References 10 publications

A 30GHz bandwidth driver amplifier with high output voltage swing for ultra-wideband localization- and sensor systems

A 30GHz bandwidth driver amplifier with high output voltage swing for ultra-wideband localization- and sensor systems

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Memetic optimization algorithm applied to design microwave amplifier for the specific gain value constrained by the minimum noise over the available bandwidth

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