An 850 mW X-Band SiGe power amplifier

Andrews, J.M.; Cressler, John D.; Kuo, Wei-Min Lance; Grens, C.M.; Thrivikraman, Tushar; Phillips, S.D.

doi:10.1109/bipol.2008.4662724

Cited by 23 publications

(3 citation statements)

References 5 publications

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“…The output power of SiGe for the uplink will stretch its performance limits. However, output power levels of SiGe at Ku-band have been demonstrated at 24.45dBm [52] and 850mW was demonstrated at 10.5GHz [53]. Similar performance levels for SiGe will be used in the system level link budget analysis which will show the feasibility of its usefulness for consumer ground stations.…”

Section: ) DC Power Consumptionmentioning

confidence: 95%

Systems Engineering of a Terabit Elliptic Orbit Satellite and Phased Array Ground Station for IoT Connectivity and Consumer Internet Access

Sturdivant

Chong

2016

IEEE Access

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Systems engineering of a satellite based data communication baseline concept is presented to achieve terabit per second throughput. It uses a constellation of five Molniya satellites and one dimension electronic scanning phased array ground terminals. The result is a baseline concept that meets customer needs for internet of things (IoT) data connectivity and for consumer high data rate internet access. Molniya orbit satellites provide the benefits of available bandwidth, lack of interference with other satellite links, and less crowded orbital paths. A drawback is that they are not geostationary since they have highly elliptical orbits. This requires ground station terminals with the ability track the satellites as they pass overhead during their orbit. However, since Molniya satellites with a properly selected eccentricity pass along the same path at nearly constant elevations relative to a fixed position on the Earth, simple and low-cost single axis scanning antennas can be used for the consumer ground terminal. This is a distinct advantage compared with competing low earth orbit constellations. The proposed solution leverages advances in semiconductor technology and low-cost antenna laminate substrate materials for an affordable phased array tracking ground terminal antenna. This paper presents link budget trade studies, system concept, orbital dynamics simulation results, and ground station component trade study.

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Section: ) DC Power Consumptionmentioning

confidence: 95%

Systems Engineering of a Terabit Elliptic Orbit Satellite and Phased Array Ground Station for IoT Connectivity and Consumer Internet Access

Sturdivant

Chong

2016

IEEE Access

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“…By suitable choice of transistor widths and bias points the majority of the voltage swing is dropped across the CG device. A similar approach has been used to enhance the voltage range of highly scaled SiGe HBT RF amplifiers [30]. …”

Section: Mosfet-mesfet Cascode For Enhanced Voltage Rf Power Amplifiersmentioning

confidence: 97%

SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE

LEPKOWSKI¹,

WILK²,

GHAJAR³

et al. 2013

Selected Topics in Electronics and Systems

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Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (ID SAT ≥ 100mA/mm), high operating frequency ( fmax >35 GHz) or enhanced breakdown voltage (VBD >25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

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“…The reduced cost and compact size of SiGe technology enable its use in highly-integrated transmit-receive (T/R) modules needed in radar and communications systems, which have historically been dominated by III-V solutions. SiGe-based power amplifiers (PA), providing nearly one-watt output power at X-Band, have already been demonstrated for use in such T/R modules [2]. Although RF switches ideally prevent leakage of such high RF power from the transmit path into the receive paths, their failure under continuous RF stress would expose the receiver front-end (specifically the LNA) to very large RF powers [3].…”

Section: Introductionmentioning

confidence: 99%

A large-signal RF reliability study of complementary SiGe HBTs on SOI intended for use in wireless applications

Seth

Thrivikraman

Cheng

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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For the first time, a large-signal RF stress study of complementary (npn + pnp) SiGe HBTs on thick-film SOI is performed, and analyses based on device physics are presented, shedding light on the observed failure mechanisms of these C-SiGe HBTs at very high RF input power. Two types of npn SiGe HBTs, low-breakdown voltage (LVNPN) and high-breakdown voltage (HVNPN) devices, as well as a high-breakdown voltage pnp SiGe HBT (HVPNP) in a 250 nm C-SiGe on SOI process are investigated. It is shown that the HVPNP can withstand aggressive RF stress for longer periods of time, compared with the LVNPN and the HVNPN, which succumb to several interesting modes of catastrophic device failure. A case is made for the use of pnp SiGe HBTs in sensitive RF front-ends that may be exposed to non-limited high RF power due to leakages in the transmit/receive (T/R) path or RF reflections.

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An 850 mW X-Band SiGe power amplifier

Cited by 23 publications

References 5 publications

Systems Engineering of a Terabit Elliptic Orbit Satellite and Phased Array Ground Station for IoT Connectivity and Consumer Internet Access

Systems Engineering of a Terabit Elliptic Orbit Satellite and Phased Array Ground Station for IoT Connectivity and Consumer Internet Access

SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE

A large-signal RF reliability study of complementary SiGe HBTs on SOI intended for use in wireless applications

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