2023
DOI: 10.1088/1674-1056/accd48
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An accurate analytical surface potential model of heterojunction tunnel FET

Abstract: In this paper, based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor (H-TFET). This model accounts for both the effects of source depletion and inversion charge which are the key factors influencing the charge, capacitance and current in H-TFET. The accuracy of the model is validated against TCAD simulation, and is greatly improved in comparison with the conventional model based on Maxwell-Boltzm… Show more

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