An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating

Wei, Chang; Tkachenko, Y.A.; Bartle, D.

doi:10.1109/22.734546

Cited by 36 publications

(16 citation statements)

References 12 publications

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“…The currents are essentially the same as in Equations (13) and (14). Charge elements implement the same capacitances and transcapacitances implicitly.…”

Section: Charge-based Approachmentioning

confidence: 97%

“…The simple capacitance model of Equations (10) and (11) takes into account only the change in voltage across the element itself. Equations (13) and (14) are obtained from the chain rule of di erentiation, and the currents are time derivatives of the charges, which is the physically correct expression. The average of the time derivative of any periodic function vanishes, and the resulting average current is zero.…”

Section: Transcapacitance Elementsmentioning

confidence: 99%

“…In the charge-based approach, the currents are calculated from the charges directly, and the derivatives are used for iteration only. The currents are essentially the same as in Equations (13) and (14). Charge elements implement the same capacitances and transcapacitances implicitly.…”

Section: Charge-based Approachmentioning

confidence: 99%

See 2 more Smart Citations

A new rule for MESFET gate charge division based on the energy conservation principle

Kallio¹,

Valtonen²

2004

Circuit Theory & Apps

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SUMMARYThe energy conservation problem in the MESFET gate charge model is presented. The energy conservation requirement leads to symmetrical transcapacitances in contradiction to the commonly accepted approaches. The transcapacitance symmetry is completely independent of device symmetry. The resulting small-signal capacitances are reciprocal. Reciprocal capacitances are often considered charge nonconservative because they do not contain transcapacitances, but in this approach reciprocity is the result of transcapacitance symmetry and the charge conservation problem is avoided since the charge-based model includes the transcapacitances. A method for dividing the MESFET gate charge into gate-drain and gate-source portions based on the energy conservation rule is developed, and the method is applied to the well-known Statz gate charge as an example.

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“…The currents are essentially the same as in Equations (13) and (14). Charge elements implement the same capacitances and transcapacitances implicitly.…”

Section: Charge-based Approachmentioning

confidence: 97%

Section: Transcapacitance Elementsmentioning

confidence: 99%

See 1 more Smart Citation

A new rule for MESFET gate charge division based on the energy conservation principle

Kallio¹,

Valtonen²

2004

Circuit Theory & Apps

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“…The NQS effects associated to R gs and R gd have been considered by using the tables associated to these elements, while the nonquasi-static effect associated to  has been approximated by using the table associated to the transcapacitance C m . This element is defined as the product between the transconductance and its associated delay [14], [17]. It should be pointed out that during Harmonic Balance (HB) simulation a DC current can be generated in a nonlinear capacitor that is function of two bias voltages [18].…”

Section: Model Extraction and Implementationmentioning

confidence: 99%

Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs

Crupi

Schreurs

Caddemi

et al. 2009

2009 9th International Conference on Telecommunication in Modern Satellite, Cable, and Broadcasting Services

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“…According to Wei et al [11], the large-signal equivalent circuit is extended by an additional thermal sub-circuit (see Figure 1). The thermal sub-circuit consists of the parallel connection of the current source, ith, the thermal resistance, Rth, and the thermal capacitance, Cth, which describe the self-heating-related decrease of the current.…”

Section: Ps-11mentioning

confidence: 99%

Advanced large-signal modeling of GaN-HEMTs

Berroth

Chigaeva

Dettmann

et al.

Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a largesignal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S 2 1 at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.

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An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating

Cited by 36 publications

References 12 publications

A new rule for MESFET gate charge division based on the energy conservation principle

A new rule for MESFET gate charge division based on the energy conservation principle

Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs

Advanced large-signal modeling of GaN-HEMTs

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