An advanced approach to control the electro-optical properties of LT-GaAs-based terahertz photoconductive antenna

Buryakov, A. M.; Ivanov, Maxim; Nomoev, Sergey; Khusyainov, D. I.; Мишина, Е. Д.; Khomchenko, V. A.; Васильевский, И. С.; Виниченко, А. Н.; Kozlovskii, K. I.; Chistyakov, A. A.; Paixão, J. A.

doi:10.1016/j.materresbull.2019.110688

Cited by 7 publications

(2 citation statements)

References 38 publications

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“…The carrier mobility and breakdown voltage threshold are two factors that affect the THz radiation generated by the PCA. Materials which can effectively produce THz radiation are low temperature grown gallium arsenide (LT-GaAs) [13][14][15], radiationdamaged silicon-on-sapphire (RD-SOS) [16], chromiumdoped gallium arsenide (Cr-GaAs) [17], indium phosphide (InP) [18], and amorphous silicon [19].…”

Section: Photoconductive Antennamentioning

confidence: 99%

Intense terahertz radiation: generation and application

Zhang

Zhao

2020

Front. Optoelectron.

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Strong terahertz (THz) radiation provides a powerful tool to manipulate and control complex condensed matter systems. This review provides an overview of progress in the generation, detection, and applications of intense THz radiation. The tabletop intense THz sources based on Ti:sapphire laser are reviewed, including photoconductive antennas (PCAs), optical rectification sources, plasma-based THz sources, and some novel techniques for THz generations, such as topological insulators, spintronic materials, and metasurfaces. The coherent THz detection methods are summarized, and their limitations for intense THz detection are analyzed. Applications of intense THz radiation are introduced, including applications in spectroscopy detection, nonlinear effects, and switching of coherent magnons. The review is concluded with a short perspective on the generation and applications of intense THz radiation.

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Section: Photoconductive Antennamentioning

confidence: 99%

Intense terahertz radiation: generation and application

Zhang

Zhao

2020

Front. Optoelectron.

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“…In order to greatly shorten the carrier lifetime, various point defects are introduced into intrinsic perfect crystals to incorporate additional energy levels in the bandgap. 10) For instance, low-temperature grown (LT) molecular beam epitaxy (MBE) [11][12][13] and ion-implantation [14][15][16] are the two most common techniques in introducing defects into bulk SI-GaAs. Among them, LT-GaAs grown by MBE has been recognized as the standard material for THz photoconductive devices, [17][18][19] especially those available in the commercial market.…”

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confidence: 99%

Facile activation of a GaAs substrate with electron beam irradiation for THz photoconductive antenna

Chia

Zhang

et al. 2022

Appl. Phys. Express

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One of the most important technological challenges that photoconductive devices in terahertz systems encounter is a viability of cost-effective and large-scale device production. We introduce an economical and mass producible approach to fabricate a substrate material of the photoconductive devices. By using an electron beam irradiator, material properties of GaAs were engineered in controllable manner, achieving comparable performance to that of a well-known photoconductive substrate, LT-GaAs. THz emission of the irradiated substrates was tested and found to be superior to a commercial device in terms of high-power THz signal emission and ability to withstand a high bias voltage.

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Excitation of terahertz surface magnetoplasmons by nonlinear mixing of two lasers on a rippled surface of magnetized n-InSb

Srivastav

Panwar

2022

Optik

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An advanced approach to control the electro-optical properties of LT-GaAs-based terahertz photoconductive antenna

Cited by 7 publications

References 38 publications

Intense terahertz radiation: generation and application

Intense terahertz radiation: generation and application

Facile activation of a GaAs substrate with electron beam irradiation for THz photoconductive antenna

Excitation of terahertz surface magnetoplasmons by nonlinear mixing of two lasers on a rippled surface of magnetized n-InSb

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