An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

Abstract

This study introduces a novel p-GaN/AlGaN/GaN heterostructure wafer, implementing a unique p-type GaN gate AlGaN/GaN HEMT configuration. In this design, the p-GaN region extends toward the drain, eliminating the need for a gate electrode. This innovation significantly enhances the HEMT's performance, with a 45.2% increase in breakdown voltage (BV) and a 17% higher threshold voltage (VTH) compared to conventional p-GaN gate HEMTs. The extended gate design redistributes the electric field, acting as a field plate to elevate the breakdown voltage. Furthermore, the proposed device, by reducing 17.4% of the saturation current without increasing the on-resistance, possibly offers improved short-circuit capability.

A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation

“…25) In addition, the selected p-GaN gate region etched, which extends towards the drain electrode, is a viable option for improving the efficiency and reliability. 26) The plasma treatment can enable the etchingfree fabrication of GaN power devices, dramatically increasing the device performance, where the hydrogenated p-GaN was also used as an edge termination for GaN power devices. [27][28][29] Using earlier research findings, this work offers a unique gate design that uses TCAD simulations to combine a p-GaN gate with an MIS structure.…”