A negative-type photosensitive polyimide (PSPI) based on semialicyclic poly(amic acid) (PAA), poly(trans-1,4cyclohexylenediphenylene amic acid), and {[(4,5-dimethoxy-2nitrobenzyl)oxy]carbonyl} 2,6-dimethylpiperidine (DNCDP) as a photobase generator has been developed as a next-generation buffer coat material. The semialicyclic PAA was synthesized from 3,3 0 ,4,4 0 -biphenyltetracarboxylic dianhydride and trans-1,4-cyclohexyldiamine in the presence of acetic acid, and the PAA polymerization solution was directly used for PSPI formulation. This PSPI, consisting of PAA (80 wt %) and DNCDP (20 wt %), showed high sensitivity of 70 mJ/cm 2 and high contrast of 10.3, when it was exposed to a 365-nm line (i-line), postexposure baked at 190 C for 5 min, and developed with 2.38 wt % tetramethylammonium hydroxide aqueous solution containing 20 wt % isopropanol at 25 C. A clear negative image of 6-lm line and space pattern was printed on a film, which was exposed to 500 mJ/cm 2 of i-line by a contact printing mode and fully converted to poly(trans-1,4-cyclohexylenebiphenylene imide) pattern upon heating at 250 C for 1 h. The PSPI film had a low coefficient of thermal expansion of 16 ppm/K compared to typical PIs, such as prepared from 3,3 0 ,4,4 0 -biphenyltetracarboxylic dianhydride and 4,4 0 -oxydianiline.