An all-organic S-scheme heterojunction containing donor–acceptor type conjugated polymer and C3N4 nanosheets assembled via π–π interaction for photocatalytic H2 generation

3D MoS2/MgIn2S4 Nanoflower Heterojunctions for Photoreduction of Cr(VI): Mechanism, Influence, and Toxicity Evaluation

“…For In 3d (Figure d), the two peaks at 445.05 and 453.57 eV were attributed to In 3d 5/2 and In 3d 3/2 of In 3+ , respectively. The two S 2p peaks of MS belonged to S 2p 3/2 and S 2p 1/2 , respectively (Figure e), indicating that S in MS was present in the form of S. − MIS and the 3% MS/MIS generally showed similar spectra, except for the peak of Mo. For Mo 3d (Figure f), the XPS peaks of Mo in MS can be divided into three core-level XPS peaks.…”

“…22,23 In an S-scheme heterojunction, an internal electric field is created across the junction due to the alignment of the energy bands of two contacting semiconductors, which contribute to the separation and transfer of charge carries. 24 What's more, the difference in energy band edge positions of two materials results in band bending downward or upward at the interface 25 with respect to other bands, which facilitates electron and hole transfer across the junction. 26,27 Based on the above two points, S-scheme heterojunctions substantially improve the interface electron transfer rate compared to Zscheme heterojunction.…”

“…Lastly, the charge transfer process in a Z-scheme heterojunction can result in the loss of charge, leading to a longer path for electrons to be transferred, which can affect the overall efficiency of the device. , The construction of S-scheme heterojunctions gradually replaced Z-scheme heterojunctions due to the new understanding of carrier transfer and separation of heterojunctions. , In an S-scheme heterojunction, an internal electric field is created across the junction due to the alignment of the energy bands of two contacting semiconductors, which contribute to the separation and transfer of charge carries . What’s more, the difference in energy band edge positions of two materials results in band bending downward or upward at the interface with respect to other bands, which facilitates electron and hole transfer across the junction. , Based on the above two points, S-scheme heterojunctions substantially improve the interface electron transfer rate compared to Z-scheme heterojunction. , The band bending structure of the S-scheme heterojunction, which provides a favorable energy gradient, effectively retains electrons and holes and enhances recombination of the meaningless photogenerated carriers, obtaining a powerful redox ability and remarkably improving maximum catalytic activity. − …”

Distance-Regulated Photoelectrochemical Sensor “Signal-On” and “Signal-Off” Transitions for the Multiplexed Detection of Viruses Exposed in the Aquatic Environment

“…When CdSe is insufficient, the contact area between the two semiconductors is smaller, which is not conducive to the separation of photogenerated electrons and holes. On the other hand, when there is an excess amount of CdSe, the “shielding effect” occurs, resulting in lower charge separation efficiency for the composite material. – In order to ensure the sensor surface has optimal electron transfer efficiency, the decreasing amount of photoactive material on the electrode surface was also optimized. As depicted in Figure S4B, the photocurrent response of the sensor started to weaken after the drop addition of the photoactive material increased to 10 μL.…”