An All‐Solution‐Based Hybrid CMOS‐Like Quantum Dot/Carbon Nanotube Inverter

Shulga, Artem G.; Derenskyi, Vladimir; Salazar‐Rios, Jorge Mario; Dirin, Dmitry N.; Fritsch, Martin; Kovalenko, Maksym V.; Scherf, Ullrich; Loi, Maria Antonietta

doi:10.1002/adma.201701764

Cited by 33 publications

(44 citation statements)

References 48 publications

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“…The interest toward this class of materials stems from their prospects in photovoltaic and optoelectronic applications. Solution‐processed solar cells with over 11% power conversion efficiencies have been fabricated based on PbS CQDs exploiting their high absorbance and the size tunability of the bandgap, field‐effect transistors (FETs) based on colloidal nanocrystals were shown to exhibit excellent performance, PbS CQD solids can be used to fabricate highly efficient ambipolar inverters, and light‐emitting field‐effect transistors (LEFETs) show the potential in light‐coupled electronics applications …”

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confidence: 99%

Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

et al. 2018

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Colloidal quantum dots (CQDs) are nanoscale building blocks for bottom-up fabrication of semiconducting solids with tailorable properties beyond the possibilities of bulk materials. Achieving ordered, macroscopic crystal-like assemblies has been in the focus of researchers for years, since it would allow exploitation of the quantum-confinement-based electronic properties with tunable dimensionality. Lead-chalcogenide CQDs show especially strong tendencies to self-organize into 2D superlattices with micrometer-scale order, making the array fabrication fairly simple. However, most studies concentrate on the fundamentals of the assembly process, and none have investigated the electronic properties and their dependence on the nanoscale structure induced by different ligands. Here, it is discussed how different chemical treatments on the initial superlattices affect the nanostructure, the optical, and the electronic-transport properties. Transistors with average two-terminal electron mobilities of 13 cm V s and contactless mobility of 24 cm V s are obtained for small-area superlattice field-effect transistors. Such mobility values are the highest reported for CQD devices wherein the quantum confinement is substantially present and are comparable to those reported for heavy sintering. The considerable mobility with the simultaneous preservation of the optical bandgap displays the vast potential of colloidal QD superlattices for optoelectronic applications.

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Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

et al. 2018

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“…The charge carrier mobility and transport in CQD solids is strongly governed by the interparticle distance, ligand type, and degree of disorder . When brought into close proximity, CQD orbitals will start to couple and carrier wavefunctions can become partly delocalized over a domain of several particles.…”

Section: Colloidal Quantum Dots For Optoelectronicsmentioning

confidence: 99%

Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Kahmann

Shulga

Loi

2019

Adv Funct Materials

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In this progress report, the recent work in the field of light-emitting field-effect transistors (LEFETs) based on colloidal quantum dots (CQDs) as emitters is highlighted. These devices combine the possibility of electrical switching, as known from field-effect transistors, with the possibility of light emission in a single device. The properties of field-effect transistors and the prerequisites of LEFETs are reviewed, before motivating the use of colloidal quantum dots for light emission. Recent reports on these quantum dot light-emitting field-effect transistors (QDLEFETs) include both materials emitting in the near infrared and the visible spectral range-underlining the great potential and breadth of applications for QDLEFETs. The way in which LEFETs can further the understanding of the CQD material properties-their photophysics as well as the carrier transport through films-is discussed. In addition, an overview of technology areas offering the potential for large impact is provided.channel is separated from the gate by an insulating gate dielectric. Gate electrode, dielectric, and channel form a capacitor that allows for charge accumulation at the channel-dielectric interface, through which the conductivity of the channel is modulated.Most commonly, the semiconducting material in the channel is doped and the FETs work through the conduction of either holes or electrons (unipolar FET). Such FETs are classified according to their working principle into inversion-mode or accumulation mode devices. For example, in n-channel inversion-mode FETs, the channel region is p-doped, and the source and drain regions are n-type semiconductors. By applying a positive gate voltage, the semiconductor at the interface with the gate dielectric inverts from p-type to n-type (inversion layer) and the channel becomes conductive. This mode is the most common operating mode of silicon metal-oxide-semiconductor FETs (MOSFET).The standard characterization of an FET includes the measurement of the output and the transfer characteristics. For the former, the gate voltage V G is constant, and the drain current I D Simon Kahmann received a shared doctorate degree from

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“…In contrast to most polymer semiconductors, the hole and electron mobilities in SWCNTs are essentially equal under ideal conditions and thus it should be possible to create equally good p-and n-channel transistors from the same nanotube network by suitable doping. Another alternative is the introduction of another electron-transporting semiconductor (e.g., zinc tin oxide, IGZO, or PbS quantum dot films) [343][344][345] for the n-type transistors in combination with p-type nanotube transistors. While the latter may cause some hysteresis and device instabilities, exposure of SWCNT networks to ambient air has enabled a range of circuits with unipolar p-type transistors.…”

Section: Field-effect Transistors and Integrated Circuitsmentioning

confidence: 99%

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Zaumseil

2018

Adv Elect Materials

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With the ability to produce large amounts of purely semiconducting and even monochiral dispersions of single-walled carbon nanotubes (SWCNT) their application as a bulk material in thin film devices on a large scale becomes feasible. Their physical properties, processing, and final devices are quite similar to those of semiconducting polymers. In the extreme case one may view carbon nanotubes as very long, rigid, and fully conjugated polymers. This analogy raises the question whether the knowledge accumulated over the last two decades of processing and studying conjugated polymers could be transferred to solution-processed nanotube devices. Here, the optical and electronic properties of both materials in solution and in thin films are discussed and compared with a focus on their application in optoelectronic devices. Some striking similarities and common issues are highlighted to show the connection between conjugated polymers and SWCNTs as 1D semiconductors.

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An All‐Solution‐Based Hybrid CMOS‐Like Quantum Dot/Carbon Nanotube Inverter

Cited by 33 publications

References 48 publications

Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

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An All‐Solution‐Based Hybrid CMOS‐Like Quantum Dot/Carbon Nanotube Inverter

Cited by 33 publications

References 48 publications

Electron Mobility of 24 cm2 V−1 s−1 in PbSe Colloidal‐Quantum‐Dot Superlattices

Electron Mobility of 24 cm2 V−1 s−1 in PbSe Colloidal‐Quantum‐Dot Superlattices

Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

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Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices