An Amorphous (Al_0.12Ga_0.88)₂O₃ Deep Ultraviolet Photodetector

Abstract

The authors report the deposition of an (AlxGa1-x)2O3 amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al0.12Ga0.88)2O3 photodetector, with a cutoff wavelength at 230 nm, was also fabricated. With-10 V applied bias, it was found the dark leakage current and the linear dynamic range (LDR) of the fabricated photodetector were about 1.23×10-9 A and 59.51 dB, respectively. With the same-10 V applied bias, the UVC/UVA contrast ratio was larger than 20. With λillumination = 230 nm and-5 V applied bias, it was found noise equivalent power (NEP) and detectivity (D*) of the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector were 9.94×10-11 W and 2.11×10 10 cmHz 1/2 W-1 , respectively. These results suggest the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector herein indicate a cost-effective solution for developing DUV photodetector applications.

Broadband Enhancement in the Spectral Response of Photovoltaic Modules with Flower-like Silver Particles

“…Due to their low cost and ease of fabrication, semiconductor photovoltaic modules have found widespread applications in both military and civilian industries [1][2][3]. A photodetector possessing a broadband spectral response holds significant implications for sensing, imaging, optical communication, and energy harvesting [4][5][6][7][8]. Therefore, developing a photodetector with a broadband spectral response has become a primary research area.…”