An Analysis of Diffusion in Semiconductors

Zaromb, Sol

doi:10.1147/rd.11.0057

Cited by 31 publications

(5 citation statements)

References 4 publications

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“…(ii) A pronounced dip in the gallium concentration was found within the emitter. It was shown that the built-in electric field (Zaromb 1957, Klein and Beale 1966, Hu and Schmidt 1968) created during the emitter diffusion could be the cause of such a dip, and the dip position, predicted on such a model, was close to that found experimentally.…”

Section: The Emitter-push or Push-out Effectsupporting

confidence: 63%

Interactions between sequential dopant diffusions in silicon-a review

Willoughby

1977

J. Phys. D: Appl. Phys.

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The trend towards very shallow, submicron diffusion depths in the fabrication of silicon-diffused devices has revealed a number of new diffusion phenomena which form the subject of this review. The diffusion characteristics of some of the individual dopants involved (phosphorus, arsenic, boron and gallium) are first briefly surveyed, and then interactions between sequential diffusions are described in detail.The effects discussed include 'emitter-push' or 'push-out', which is the enhanced penetration of a base dopant, such as boron, directly beneath an emitter diffusion, and 'base retardation' which is where the diffused base-collector junction away from the emitter advances more rapidly than that directly beneath it. Also discussed are effects associated with buried marker layers, which also show evidence for enhanced diffusion directly beneath certain diffused emitters.On the basis of the evidence reviewed, it is suggested that anomalies connected with phosphorus diffusion, namely the rapidly diffusing phosphorus 'tail', the 'push-out' effect and the movement of buried marker layers are all linked and are consistent with the generation of a high supersaturation of point defects. The mechanism of generation, which has to account for enhancements in diffusivity of up to 100, and the identity of the defects are still in question, but it is argued that dislocation-related generation mechanisms can now be ruled out. Another general conclusion emerging from the review is that a 'depletion' or 'dip' is found in the base profile (boron or gallium) under either a phosphorus or arsenic emitter diffusion, and that most observations are consistent with that caused by the electric field generated by the diffusing emitter dopant. Finally, the causes of 'base retardation' are still not clear and the review suggests a number of areas for further study.

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Section: The Emitter-push or Push-out Effectsupporting

confidence: 63%

Interactions between sequential dopant diffusions in silicon-a review

Willoughby

1977

J. Phys. D: Appl. Phys.

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“…2, there is a one-anda-half-to threefold increase in x/D2 as the surface concentration varies from below 1 X 10 TM to 2 • 1020 atoms/cm 3, depending on the diffusion temperature. Effects that have been advanced to account for such an increase are the action of the self-induced field on the ionized impurities (22,23) and an increase in the equilibrium lattice vacancy concentration (24)(25)(26). The first effect should result in a factor of 2 increase in D2 as the dopant concentration becomes large compared to the intrinsic carrier concentration at the diffusion temperature.…”

Section: Discussion Of Resultsmentioning

confidence: 99%

Doped Oxides as Diffusion Sources

Barry

1970

J. Electrochem. Soc.

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The diffusion of phosphorus from a deposited doped oxide into silicon has been found to be consistent with a previously derived model describing doped oxides as diffusion sources. Diffusion coefficients of phosphorus in both silicon and silicon dioxide have been measured in terms of this model over surface concentrations varying from 6×1017 normalto 2×1020 normalatoms/cm3 at diffusion temperatures of 1000°, 1100°, and 1200°C.

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“…The density of introduced charged centers also suggests that these be shallow Si donors. In fact, the density of introduced charged centers can be well fitted in the framework of a simple diffusion model following Fick's law [13], in which the half-space with depth z > 200 nm has a constant density N d ≈ 5 × 10 17 cm −3 of donors able to diffuse toward the active QW region. The fit, reported in figure 2(b), can be obtained provided the diffusion coefficient assumes the value D = 2.5 × 10 −18 cm 2 s −1 , significantly higher than the values reported in the literature for bulk GaN [14].…”

Section: Redistribution Of Quantum Well States In Capacitance-voltage...mentioning

confidence: 99%

Redistribution of multi-quantum well states induced by current stress in In_xGa_1−xN/GaN light-emitting diodes

Rigutti

Basiricò

Cavallini

et al. 2009

Semicond. Sci. Technol.

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We report on the modification in the density of states of a multi-quantum well system of InGaN/GaN-based light emitting diodes. The modification was induced by dc current stress at I = 50 mA (current density J = 55 A cm −2 ) with stress times up to 100 h. The samples were characterized by means of current-voltage and capacitance-voltage, and photocurrent spectroscopy at different stress stages. We observed a progressive redistribution of the conduction band charge in the multi-quantum well system, along with a modification of the shape of the photocurrent spectrum.

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An Analysis of Diffusion in Semiconductors

Cited by 31 publications

References 4 publications

Interactions between sequential dopant diffusions in silicon-a review

Interactions between sequential dopant diffusions in silicon-a review

Doped Oxides as Diffusion Sources

Redistribution of multi-quantum well states induced by current stress in In_xGa_1−xN/GaN light-emitting diodes

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An Analysis of Diffusion in Semiconductors

Cited by 31 publications

References 4 publications

Interactions between sequential dopant diffusions in silicon-a review

Interactions between sequential dopant diffusions in silicon-a review

Doped Oxides as Diffusion Sources

Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes

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Product

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About

Redistribution of multi-quantum well states induced by current stress in In_xGa_1−xN/GaN light-emitting diodes