An analysis of electron beam evaporation of SrTiO₃on Si substrates

Abstract

Thin films have been prepared by electron beam evaporation of strontium titanate (SrTiOl) on bare (1 11) p-type siliwn subsbate held at room temperature. The as deposited films were annealed at IW "C in flowing oxygen to compensate for any loss of 0 from the sample. The as deposited and the annealed samples were analysed by Auger electron spectroscopy (AES).The *ES analysis shows that there is no Uace of Si present in the bulk of the film and the Silfilm interface is fairly sharp. The results are discussed in the light of the usefulness of the e-bwn deposition of Sri703 for preparation of a buffer layer on an Si substrate for the deposition of high-T, supermnducting materials in thick-an6 thin-film form.