An analysis of EUV-resist outgassing measurements

Dean, Kim; Nishiyama, Iwao; Oizumi, Hiroaki; Keen, Anthony; Cao, Heidi B.; Yueh, Wang; Watanabe, Takeo; Lacovig, Paolo; Rumiz, L.; Denbeaux, Gregory; Simon, Julia

doi:10.1117/12.712379

Cited by 25 publications

(21 citation statements)

References 9 publications

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“…19 The outgassing rate of RRR was found to be 5.4 Â 10 14 molecules cm À2 s À1 scaled to an irradiance of 15 mW cm À2 and was approximately equal to the median of eight reported values. 16 This outgassing rate was consistent with the results 3.3 Â 10 14 and 7.5 Â 10 14 molecules cm À2 s À1 reported by the University of Albany and BOC Edwards, respectively, using the same QMS method as used for the previous RRR test. Outgassing from the RRR samples in the current work was only characterized in the m/z ¼ 13-100 range because of the limited synchrotron beam time.…”

Section: A Characterization Of Outgassingsupporting

confidence: 88%

“…It is worthy to note that this material had been used previously for the outgassing round robin resist tests organized by SEMATECH. 16 The material has been denoted as RRR in this report. Both PMMA and RRR were prepared using propylene glycol monomethyl ether as the solvent with the soft bake temperature of 140 C for 60 s. The proprietary underlayer films included a 30 nm silicon-containing underlayer film (ULSiOCH; approximate chemical formula, SiOC 0.2 H 0.025 ) and two 15 nm underlayer films with the chemical formulas…”

Section: Methodsmentioning

confidence: 99%

“…These species represented more than 90% of the outgassed products and these results were consistent with those reported by SEMATECH and the University of Wisconsin in the RRR test in which isobutene and isobutane comprised 90% of the outgassed products from an RRR film as determined by a thermal desorption/gas-chromatography mass spectrometer (TD/GC-MS) method. 16 In addition to O (16) outgassing, this work identified anomalous high intensity peaks at m/z ¼ 28 and 44, which were attributed to CO and CO 2 . The O, CO, and CO 2 outgassing must therefore have been derived from the deprotected -C(O)OC 4 H 9 moieties of the RRR film.…”

Section: A Characterization Of Outgassingmentioning

confidence: 95%

“…Semiconductor Manufacturing Technology (SEMATECH) organized a roundrobin resist test to measure the absolute outgassing rates from an EUV model photoresist at eight measurement sites and reported that the absolute values varied over 4 orders of magnitude. 16 In spite of this reported variation, very few facilities are available to the lithography community for measuring the quality and quantity of resist outgassing, which severely limits materials research and development in this area.…”

Section: Introductionmentioning

confidence: 99%

“…Prior to the development of the witness-plate method, new EUV photosensitive samples had to pass certain preset outgassing criteria before they could be exposed under an EUV exposure tool. [7][8][9][10][16][17][18][19][20][21][22][23][24][25][26] Although the characterization of outgassed species and the quantification of outgassing are no longer used for resist a) Author to whom correspondence should be addressed; electronic mail: graceho@nuk.edu.tw qualification by the majority of the EUVL community, these techniques can provide useful information for understanding the photochemical mechanisms of outgassing, which can help in the design of new photosensitive materials. Semiconductor Manufacturing Technology (SEMATECH) organized a roundrobin resist test to measure the absolute outgassing rates from an EUV model photoresist at eight measurement sites and reported that the absolute values varied over 4 orders of magnitude.…”

Section: Introductionmentioning

confidence: 99%

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Outgassing and photochemical studies of photosensitive films upon irradiation at 13.5 nm

Shao

Sung

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Neutral outgassed species from polymethylmethacrylate (PMMA), a model resist (denoted RRR), and three underlayer thin films have been characterized and their absolute outgassing rates determined using a quadrupole mass spectrometer following irradiation at 13.5 nm. The radiation, which was in the extreme ultraviolet (EUV) energy range at 13.5 nm, was delivered from the 08A1-beamline at the National Synchrotron Radiation Research Center in Taiwan. The side chains of acryl-type polymers that are vulnerable to fragmentation and outgassing upon EUV irradiation were characterized and the important outgassed species (H 2 O and H 3 O þ ) were identified from the Si-containing photosensitive materials. The authors propose that the Si-OH formed on the Si-containing surfaces upon EUV irradiation likely undergoes subsequent incremental H 2 O and H 3 O þ outgassing upon cumulative EUV irradiation. A benchmark comparison revealed that the absolute outgassing rates of PMMA, RRR, and a Si-containing underlayer sample determined in this work were consistent with values previously reported in the literature. Thus, we have effectively demonstrated that the Taiwanese facility is capable of evaluating absolute resist outgassing rates, making it one of a limited number of EUV resist evaluation sites worldwide. The authors have provided direct evidence that the extent of ionic and neutral outgassing from 80, 100, and 125 nm PMMA and RRR films is not thickness-dependent. The authors have further demonstrated that the absolute outgassing rates of PMMA and RRR films of various thickness and two oxy-hydrocarbon underlayer samples correlated strongly with the 13.5 nm photoabsorption (r abs ) and the structural toughness [double-bond-equivalence-per-backbone (DBEPB)] of the polymers. The authors revealed that the formula r abs /DBEPB could be used as a generic metric to predict the resistance of photosensitive films to EUV irradiation for the oxy-hydrocarbons in this work and four previously studied photoresists.

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Section: A Characterization Of Outgassingsupporting

confidence: 88%

Section: Methodsmentioning

confidence: 99%

Section: A Characterization Of Outgassingmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Outgassing and photochemical studies of photosensitive films upon irradiation at 13.5 nm

Shao

Sung

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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X-ray photoelectron spectroscopy process optimization for characterization of trace contamination elements for extreme ultraviolet resist outgassing study

et al. 2013

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X-ray photoelectron spectroscopy (XPS) is used for elemental identification and quantification in a number of fields, and the optimization of XPS performance can help in making better use of the limited XPS tool availability. In the field of extreme ultraviolet (EUV) lithography, one of the requirements is having a clean vacuum environment to minimize contamination of the EUV optics. EUV resist outgassing is viewed as one of the main issues that could affect the vacuum environment. There is a program underway to measure the relative contamination rates from different resists following the ASML (provider of lithography systems) approved protocols for witness plate testing. One of the key steps is the XPS measurement of residue on the optics after cleaning. The role of XPS in quantification of species that adhere to the ruthenium-coated silicon witness plate sample is discussed. The various XPS tool parameters like the pass energy and source setting were optimized for our application of witness plate analysis. The statistics of our XPS tool were studied, and combined with the fundamental XPS equations, a simple mathematical model was developed to optimize the number of scans for the various elements of interest in our witness plate study. Using the optimized number of scans, the acquisition time to measure the contaminant elements to a precision better than 0.1 at.% was minimized. The model devised in the paper can be adapted to other XPS measurements requiring different levels of precision.

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Photochemistry of photoresists and underlayer materials upon irradiation at 13.5nm

Ho¹,

Shih²,

Kang³

et al. 2010

Journal of Photochemistry and Photobiology A: Chemistry

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An analysis of EUV-resist outgassing measurements

Cited by 25 publications

References 9 publications

Outgassing and photochemical studies of photosensitive films upon irradiation at 13.5 nm

Outgassing and photochemical studies of photosensitive films upon irradiation at 13.5 nm

X-ray photoelectron spectroscopy process optimization for characterization of trace contamination elements for extreme ultraviolet resist outgassing study

Photochemistry of photoresists and underlayer materials upon irradiation at 13.5nm

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