An analysis of Schottky barrier in silicene/Ga₂SeS heterostructures by employing electric field and strain

Abstract

Two-dimensional materials are leading the way in nanodevice applications thanks to their various advantages. Although two-dimensional materials allow opportunities for many applications, they have certain limitations. In the last decade,...

First-Principles Investigation of MXene/MoSi2N4 van der Waals Heterostructures: Strong Fermi Level Pinning Effect Resulting in Ohmic Contact with Low Contact Resistance

“…It can be observed that Φ n is linearly dependent on W M when only W M is close to the ionization energy and electron affinity energy of the MoSi 2 N 4 monolayer. The S (F) exhibits the dependence on W M , whose value is equal to 0.82, which is higher than that of In 2 Se 3 /2D metal ( S = 0.69 and 0.49) and 3D metal/MoSi 2 N 4 ( S = 0.69), indicating the controllable SBH at the F-MXene/MoSi 2 N 4 interface, which can be easily adjusted by strain and electric field. , However, the change in W M of the O-MXenes causes the relatively small shift in Φ n , resulting in S (O) = – 0.2; even Φ n decreases with W M of O-MXenes increasing. The OH-MXene/MoSi 2 N 4 VHTs have a zero S (OH), indicating a very strong FLP effect, which pins the Fermi level into conduction bands tightly.…”

“…The S (F) exhibits the dependence on W M , whose value is equal to 0.82, which is higher than that of In 2 Se 3 /2D metal (S = 0.69 and 0.49) 46 and 3D metal/MoSi 2 N 4 (S = 0.69), 47 indicating the controllable SBH at the F-MXene/ MoSi 2 N 4 interface, which can be easily adjusted by strain and electric field. 48,49 However, the change in W M of the O-MXenes causes the relatively small shift in Φ n , resulting in S (O) = − 0.2; even Φ n decreases with W M of O-MXenes The value of S between f-MXenes and MoSi 2 N 4 can also explain the phenomena in previous theoretical reports. For example, Lan et al 50 investigated the Schottky barriers of Ti 2 CO 2 /Ti 2 CF 2 VHTs and found that the SBH is difficult to adjust under different electric fields.…”

Unexpected electro-catalytic activity of the CO reduction reaction on Cr-embedded poly-phthalocyanine realized by strain engineering: a computational study

“…Then the lattice constants were artificially changed to simulate the strain. The strain ( σ ) was calculated as follows: 38 where a ′ and a 0 are the strained and unstrained lattice constants, respectively. Here the positive σ value means tensile strain, and the negative σ value means compressive strain.…”

Realization of controllable multifunctionality by interfacial engineering: the case of silicene/hBN van der Waals heterostructure

“…Therefore, various manipulation methods such as strain engineering [38], the use of external electric fields [39], alloying [40], and intercalation [41] may be used to bring further changes in the characteristics of vdWHS. For instance, Schottky barrier height in silicene/Ga 2 SeS vdWHS [42] and opened band gap at Dirac K-point of silicene in Si/GaSe vdWHS [16] can be critically tuned by applying an external electric field and biaxial strain.…”