An Analytic Approach to Nonlinearity Analysis of Memristor

Hu, Wei; Wei, Rongshan

doi:10.1109/ted.2019.2909106

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…Several works were carried out in the literature focused on numerical integration or approximate method: Finite Element Method [7], Volterra series [8], homotophy perturbation method [9], perturbation theory [10], homotophy analysis method [11], multiple scale [12].…”

Section: Introductionmentioning

confidence: 99%

Analytical method for nonlinear memristive systems

MARINCA,

MARINCA

2023

Proc. Rom. Acad. Ser. A - Math. Phys. Tech. Sci. Inf. Sci.

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This work is devoted to providing an approximate analytical method to analyze memristor devices. One of basic property of the memristor is pinched hysteresis, considered to be a signature of the existence of memristance. The presence of hysteresis defines the material implementation of its memristive effects. This it its fundamental property, which looks more like a nonlinear anomaly. The memristor technology offers lower heat generation as it utilizes less energy. Optimal auxiliary functions method (OAFM) is implemented to find an approximate solution for the state variable in memristor with a very high accuracy. The presence of the auxiliary functions and some optimal convergence-control parameters Ci assure a fast convergence of the solutions.

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Section: Introductionmentioning

confidence: 99%

Analytical method for nonlinear memristive systems

MARINCA,

MARINCA

2023

Proc. Rom. Acad. Ser. A - Math. Phys. Tech. Sci. Inf. Sci.

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“…Despite being a well-known and useful technique, Fourier analysis has been rarely applied to resistive memories, sometimes called memristive devices [1]. In fact, only a handful of publications have appeared in the literature that discuss the memory response (hysteresis) of memristive elements by means of Fourier analysis [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

The Fourier signatures of memristive hysteresis

Pershin¹,

Chien²,

Ventra³

2021

J. Phys. D: Appl. Phys.

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While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions, and introduce a measure of hysteresis. These results may be used to quantify the memory content of resistive memories, and tune their Fourier spectrum according to the excitation signal.

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“…Although this behaviour has been shown to exist in other non-linear devices such as a non-linear inductor or a non-linear capacitor [13][14][15], and that its appearance is linked to satisfying the necessary conditions of the theory of Lissajous figures [16][17][18], it is still mistakenly attributed to memristors only. There are actually doubts about the uniqueness of the memristor as a fundamental device which have been raised by several researchers (see [19] and the references therein) but there is no doubt that it is a dynamic and non-linear device [10,20,21]. Without being non-linear, the frequency-doubling mechanism mandated by the theory of Lissajous figures, which is essential to create a pinched loop (as explained in detail in [16] and most recently in [22]) cannot be obtained.…”

Section: Introductionmentioning

confidence: 99%

Pinched hysteresis loops in non‐linear resonators

Elwakil

Fouda

Majzoub

et al. 2020

IET Circuits, Devices & Syst

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This study shows that pinched hysteresis can be observed in simple non‐linear resonance circuits containing a single diode that behaves as a voltage‐controlled switch. Mathematical models are derived and numerically validated for both series and parallel resonator circuits. The lobe area of the pinched loop is found to increase with increased frequency and multiple pinch points are possible with an odd‐symmetrical non‐linearity such as a cubic non‐linearity. Experiments have been performed to prove the existence of pinched hysteresis with a single diode and with two anti‐parallel diodes. The formation of a pinched loop in these circuits confirms the following: (1) pinched hysteresis is not a fingerprint of memristors, and (2) the existence of a non‐linearity is essential for generating this behaviour. Finally, an application in a digital logic circuit is validated.

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An Analytic Approach to Nonlinearity Analysis of Memristor

Cited by 7 publications

References 17 publications

Analytical method for nonlinear memristive systems

Analytical method for nonlinear memristive systems

The Fourier signatures of memristive hysteresis

Pinched hysteresis loops in non‐linear resonators

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