An analytical approach for analysis and optimization of formation of field-effect heterotransistors

Abstract

Purpose The purpose of this paper is to analyze and optimize the formation of field-effect heterotransistors using analytical approach. The approach makes it possible to analyze mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure. The optimization makes it possible to decrease dimensions of the heterotransistors and to increase speed of transport of charge carriers during functioning of the transistors. Design/methodology/approach The authors introduce an analytical approach for analysis of mass and heat transport, which makes it possible to take into account at one time varying in space and time parameters of the transports (diffusion coefficient, heat conduction coefficient, etc.) and nonlinearity of processes. The approach enables analysis of mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure and optimises the technological process. The optimization means it is possible to decrease dimensions of field-effect heterotransistors. Findings In this paper the authors introduce an approach to manufacture a field-effect heterotransistor with inhomogeneous doping of channel. Some recommendations to optimize technological process to manufacture more compact distribution of concentration of dopant have been formulated. Originality/value The results are original and the paper provides an approach to the manufacture of a field-effect heterotransistor.

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“…We optimize the annealing time framework recently introduces approach. [29][30][31][32][33][34][35][36][37] Framework this criterion, we approximate real distribution of concentration of dopant by step-wise function [Figure 4 where Ψ (x,y,z) is the approximation function. Dependences of optimal values of annealing time on parameters are presented on Figures 6 and 7 for diffusion and ion types of doping, respectively.…”

“…This changing of distribution of concentration of dopant could be at least partially compensated using laser annealing. [37] This type of annealing gives us the possibility to accelerate the diffusion of dopant and another processes in the annealed area due to inhomogeneous distribution of temperature and Arrhenius law. Accounting relaxation of mismatch-induced stress in heterostructure could lead to the changing of optimal values of annealing time.…”

An Approach to Manufacture Small Multiplexer with Dense Field-Effect Transistors

“…If annealing time is large, distribution of concentration of dopant is too homogenous. We optimize annealing time framework recently introduces approach [29][30][31][32][33][34][35][36][37]. Framework this criterion we approximate real distribution of concentration of dopant by step-wise function (see it is necessary to anneal radiation defects after ion implantation.…”

“…In this situation optimal value of additional annealing time of implanted dopant is smaller, than annealing time of infused dopant. [37]. This type of annealing gives us possibility to accelerate diffusion of dopant and other processes in annealed area due to inhomogenous distribution of temperature and Arrhenius law.…”

On approach for homogeneity increasing of films grown from the gas phase with account natural convection and changes in the rate of chemical interaction between materials

“…= vr (r,-1,z,t) = vr (r,+1,z,t); T (0,,z,t)  ; v (r,-1,z,t) = v (r,1, z,t) = v (r,-1,z,t) = v (r,+1,z,t); vz (r,-1,z,t) = vz (r,1,z,t) = vz (r,-1,z,t) = vz (r,+1,z,t); vr (r,,-L,t) = 0; vr(r,,L,t) = 0; vr (0,,z,t)  ; vz(r,,-L,t) = V0; vz(rd2/2,,z[-d2/2,d2/2],0) =  zcos ()tg (1); v (r,,L,t) = 0; v(0,,z,t)  ; vz(r,,0,t) = 0; vz(r,,L,t) =V0, vz(r,,L,t) = V0, vz(0,,z,t)  ; vr(r,,z,0) = 0; Now we will calculate solution of (5) by method of averaging functional corrections [14][15][16][17][18][19]. Equations for first-order approximations vr1, v1, vz1 of the considered components takes the form…”