An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs

Cazaux, Jean-Louis; Ng, G. I.; Pavlidis, D.; Chau, Hin-Fai

doi:10.1109/16.2541

Cited by 35 publications

(9 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The donor energy level ( E d ) was 50 meV. The conduction-band discontinuity A E, and the AlGaAs permittivity E are both dependent on the aluminum composition X in the AlGaAs layers, and are calculated by [3] A E , = 0.67 X AEg = 0.835X3,…”

Section: Analytical Modelmentioning

confidence: 99%

“…Various analytical models both for single-heterojunction (SH) and double-heterojunction-(DH-) based HEMTs [3,8,12, 141 have already been developed. An analytical charge control model for DH HEMTs was presented by Cazaux, Pavlidis, and Chau [3], but the model show poor agreement with the exact self-consistent calculations, particularly near the threshold regions. Recently, Yu and Ibrahim [8] have developed a closed-form charge control and dc model for DH HEMTs.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analytical charge control model for GaAs/AlGaAs-based multiple-quantum-well power hemts

Nawaz

Jensen

1996

Microw. Opt. Technol. Lett.

View full text Add to dashboard Cite

show abstract

Section: Analytical Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analytical charge control model for GaAs/AlGaAs-based multiple-quantum-well power hemts

Nawaz

Jensen

1996

Microw. Opt. Technol. Lett.

View full text Add to dashboard Cite

show abstract

“…Details of the complete HEMT structure have been reported earlier [2]. Its capacitance-voltage characteristics are determined [9] by the donor layer and the different occupancies of electron states and sub-band energy variations with sheet charge concentration. Access to the voltage-dependent capacitive region is made through two-dimensional electron-gas (2DEG).…”

Section: Multiplier Designs Using Inaias/lngaas Heterostructuresmentioning

confidence: 99%

Diode multipliers for submillimeter‐wave InAlAs/InGaAs heterostructure monolithic integrated circuits

Kwon

Pavlidis

1991

Micro & Optical Tech Letters

Self Cite

View full text Add to dashboard Cite

InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter‐wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer and a new proposed scheme of quantum‐confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

show abstract

“…The choice of layer thickness, doping concentration and spacers was made using an analytical model [7].…”

Section: Dh Maract Eristics For Variable Retsior Applications-bridgmentioning

confidence: 99%

A HEMT Monolithic Double Channel Attenuator with Broadband Characteristics and Wide Dynamic Range

Cazaux

Pavlidis

et al. 1988

18th European Microwave Conference, 1988

View full text Add to dashboard Cite

ABSTIlACTDouble Channel HEMT's are used as variable resistor elements in a bridged-T attenuator with broadband characteristics (0.5-12GHz), and wide dynamic range (12-16dB). A small insertion lasm (2.8dB minimum) is obtained with the help of the heterojunction approach which results in smaller ON-channel resistances than MESFET technology. INTROD2UCTIONGaAs FET's can be used as switching or variable attenuation elements if their low field source-drain resistance is modulated by the gate voltage [1,2]. Devices of this type have demonstrated extremely high switching speed, negligible control-power dissipation, and good power handling capability.Ideal switching FET's should have characteristics of low ON-resistance for minimum insertion loss and large resistance variation for high dynamic range. Another important design parameter is the depletion capacitance [3] in the OFF state and the source-drain geometrical capacitance in the ON state. This allows shunt displacement current flow and results consequently in isolation degradation at high frequencies.To control and optimize the resistance and capacitance characteristics of MESFET's, it is necessary to increase their doping level or reduce their width respectively. The latter will, however, occur at the expense of increased impedance in the ON-state. Furthermore, mobility degradation and excesive gate leakage can exist as a result of high dopings.High Electron Mobility aansistors offer an alternative solution to these problems, especially when designed with multiple heterojunction channels [4,5]. The absence of ionized impurity effects in such systems allow drift mobilities which compare to those dictated by phonon scattering and the access, as well as, channel resistances can therefore be substantially reduced. As shown in the paper this has a direct impact on the ON/OFF resistance ratio and the attenuator's dynamic range can consequently be improved.The design of the attenuator is based on the bridged-T principle which was reported to give 3.5 to 5.0 dB insertion loss and 17.0 to 10.0 dB maximum attenuation from 1 to 10 GHz [6]. Theoretical and experimental data are presented for the HEMT attenuator element design and the monolithic bridged-T circuit. THE BRIDGED-T PRINCIPLE AND CIRCUIT OPTIMIZATIQN CONSIDERATIONSThe circuit schematic of the bridged-T attenuator is shown in Fig. 1. The attenuation is controlled by the ratio of the series (R86) and shunt (RJh) transistor channel resistances as follows:The two gate voltages V., and V2b are varied in a way which allows the Rae and R,,h control and the variation of attenuation, while maintaining good matching as imposed by the condition:Rae. x R,,h,:-Z z2(2)

show abstract

An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs

Cited by 35 publications

References 16 publications

Analytical charge control model for GaAs/AlGaAs-based multiple-quantum-well power hemts

Analytical charge control model for GaAs/AlGaAs-based multiple-quantum-well power hemts

Diode multipliers for submillimeter‐wave InAlAs/InGaAs heterostructure monolithic integrated circuits

A HEMT Monolithic Double Channel Attenuator with Broadband Characteristics and Wide Dynamic Range

Contact Info

Product

Resources

About