An analytical expression for sheet carrier concentration vs gate voltage for HEMT modelling

“…Under the Model Description section, subsection 1 presented that Gupta's model for 2DEG versus Fermi level is the best except our model. Hence, we will make a comparison between our charge control model and DasGupta's [29]. Both of them are based the expression of Fermi level versus 2DEG themselves.…”

Section: Analysis Of Surface Charge Controlmentioning

confidence: 99%

Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor

Khan¹

2013

JEEE

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Abstract:We have argued that the nature of surface potential variation with gate voltage of AlN/GaN/AlGaN Double Heterojunction Field Effect Transistor (DHFET) is no different from that of the conventional GaAs/AlGaAs HEMT devices. Necessary simulated band diagrams have been presented to justify our claim and we have also proposed a nonlinear expression for Fermi level (E F ) variation with the two-dimensional electron gas density (2DEG). We have showed that our proposed expression provides better agreement with the numerical solution than the previous approximations. Besides, expression of surface charge density (n s ) variation with gate voltage (V G ) obtained using our proposed model, shows better fit with the numerical simulation data in wide range of bias conditions.

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“…where is the permittivity of active layer, q is electronic charge, The variation of E F with n s can be modeled very accurately by using a simple polynomial [10]:…”

Section: Model Formulationmentioning

confidence: 99%

Analytical noise model of a high‐electron‐mobility transistor for microwave‐frequency application

Guru

Vyas

Gupta

et al. 2004

Micro & Optical Tech Letters

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0.520 nm from 1550.620 to 1550.616 nm. The impact of mode competition at around the 1530-nm range is reduced when utilizing the band-pass filter. Therefore, the efficiency needed to produce more Brillouin Stokes is increased and these Stokes experience higher gain in the cavity. CONCLUSIONThe improvement of the number of Stokes in the Brillouin erbiumfiber laser system, incorporating a band-pass filter, has been reported for the first time. The total output power of Brillouin Stokes improved to 2.3 mW with a 21% increment, as compared to that of the conventional design. The maximum number of 15 Brillouin stokes is obtained in the proposed design, which reflects the efficiency of the band-pass filter to suppress the competing modes in the region of 1530 nm. The flatness of the BEFL output can be increased with the use of the band-pass filter.

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An analytical expression for sheet carrier concentration vs gate voltage for HEMT modelling

Cited by 80 publications

References 7 publications

Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications

Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications

Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor

Analytical noise model of a high‐electron‐mobility transistor for microwave‐frequency application

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