An analytical model for beam induced contamination in ion implantation

Ryssel, H.; Frey, L.; Häublein, V.; Lucassen, M.; Gyulai, J.

doi:10.1109/iit.1999.812161

Cited by 4 publications

(3 citation statements)

References 3 publications

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“…Ryssel et al [22] performed experiments by Therefore, ion beams in the 100 keV energy range cause contamination which linearly depends on the ion fluence up to a threshold value when it turns to saturation.…”

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Ar+ ion irradiation-induced reorganization of colloidal silica nanoparticles in Langmuir–Blodgett monolayers

et al. 2015

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Ar+ ion irradiation-induced reorganization of colloidal silica nanoparticles in Langmuir–Blodgett monolayers

et al. 2015

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“…Most metallic contamination occurs during wafer processing, particularly reactive ion etching and ion implantation [1,2]. Such ion acceleration process-induced metallic contamination is present on the surface as well as below the surface [3]. In this paper, the behavior of metals penetrating the silicon substrate by the collision of dopant ion and surface metals and by annealing are quantitatively demonstrated.…”

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Quantitative Analysis of Transition Metals Penetrating the Silicon Substrate by Dopant Ion Implantation

Saga¹,

Ueno²,

Ohno³

2009

ECS Trans.

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The behavior of metals penetrating the silicon substrate by the collision of dopant ion and surface metals are quantitatively demonstrated. We have found using silicon step etching followed by ICP-MS and SIMS that several percent of surface metals penetrate silicon and are present at a little shallower region than the depth of the highest dopant concentration after ion implantation. The depth of metals penetrating the silicon substrate during dopant ion implantation and subsequent annealing is found to depend on metal species. We have also found using recombination lifetime and Si photoluminescence measurements that carrier traps are generated in silicon by metal penetration even when implanted through SiO2.

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“…[1][2][3] Most metallic contamination occurs during wafer processing, particularly reactive ion etching and ion implantation [4][5][6] and here it has been reported that metals transported with dopant ion from an ion source or acceleration tube in ion implantation equipment can be deposited on silicon surfaces. 5,6 On the other hand, the behavior of surface metal impurities penetrating by the collision with a dopant ion has not been known. The ion implantation may assist surface metal impurities penetrating the screen films and silicon.…”

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Behavior of Transition Metals Penetrating Silicon Substrate through SiO₂and Si₃N₄Films by Arsenic Ion Implantation and Annealing

Saga¹,

Ohno²,

Shibata

et al. 2015

ECS J. Solid State Sci. Technol.

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The behavior of metals penetrating the silicon substrate through a screen SiO 2 or Si 3 N 4 film by the collision of arsenic ion and surface metals are quantitatively demonstrated. We have found using silicon step etching followed by ICP-MS and SIMS that 0.1∼8% of surface metals (Fe, Cr, Ni, Cu, and W) penetrate silicon even when implanted through screen SiO 2 film, depending on metal species and the film thickness. The surface metals on a CVD Si 3 N 4 film can also penetrate into the silicon during ion implantation and/or subsequent annealing. W is most difficult to penetrate the thermally-grown SiO 2 film, while W and Cr can easily penetrate a CVD Si 3 N 4 films. We have also found using microwave photoconductive decay measurements that recombination centers are generated in silicon by low level metal penetration even when implanted through screen Metallic contamination on silicon surfaces has a detrimental impact on the performance and yield of ULSI devices. Surface metal impurities degrade the gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and these result in junction leakage, degrade retention characteristics in DRAMs, and cause dark currents in image sensors. Surface metal impurities often penetrate the silicon by thermal diffusion in ULSI processing. The diffusion behavior of these metal impurities in silicon is well-known. [1][2][3] Most metallic contamination occurs during wafer processing, particularly reactive ion etching and ion implantation 4-6 and here it has been reported that metals transported with dopant ion from an ion source or acceleration tube in ion implantation equipment can be deposited on silicon surfaces. 5,6 On the other hand, the behavior of surface metal impurities penetrating by the collision with a dopant ion has not been known. The ion implantation may assist surface metal impurities penetrating the screen films and silicon. The collided metal atoms' penetrating silicon can be prevented by screen films such as SiO 2 or Si 3 N 4 films, 7 in which the diffusion coefficients of metal impurities such as Ni and Cu are smaller than in Si. 8 In this paper, the behavior of metals penetrating the silicon substrate through a thermally grown SiO 2 or CVD Si 3 N 4 film by the collision of dopant ion and surface metals and subsequent annealing are quantitatively demonstrated. The generation of recombination centers due to the metal penetrating silicon is also discussed. ExperimentalCzochralski (CZ) Si (100), (p-type, 8-12 cm), 200 mm diam. wafers were used in this study. A group of wafers was oxidized to form silicon oxides on the surface. The thickness of the silicon oxide was 5 nm, 20 nm, 80 nm, 120 nm, and 160 nm. A Si 3 N 4 film was deposited on the surface of another group of wafers at 700• C by low pressure CVD. The thickness of the Si 3 N 4 film was 20 nm.Next, the silicon wafers were cleaned with NH 4 OH/H 2 O 2 /H 2 O mixture and HCl/H 2 O 2 /H 2 O mixture. The surfaces of the SiO 2 and Si 3 N 4 films of the wafers were hydrophilic. ...

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An analytical model for beam induced contamination in ion implantation

Cited by 4 publications

References 3 publications

Ar+ ion irradiation-induced reorganization of colloidal silica nanoparticles in Langmuir–Blodgett monolayers

Ar+ ion irradiation-induced reorganization of colloidal silica nanoparticles in Langmuir–Blodgett monolayers

Quantitative Analysis of Transition Metals Penetrating the Silicon Substrate by Dopant Ion Implantation

Behavior of Transition Metals Penetrating Silicon Substrate through SiO₂and Si₃N₄Films by Arsenic Ion Implantation and Annealing

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An analytical model for beam induced contamination in ion implantation

Cited by 4 publications

References 3 publications

Ar+ ion irradiation-induced reorganization of colloidal silica nanoparticles in Langmuir–Blodgett monolayers

Ar+ ion irradiation-induced reorganization of colloidal silica nanoparticles in Langmuir–Blodgett monolayers

Quantitative Analysis of Transition Metals Penetrating the Silicon Substrate by Dopant Ion Implantation

Behavior of Transition Metals Penetrating Silicon Substrate through SiO2and Si3N4Films by Arsenic Ion Implantation and Annealing

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Behavior of Transition Metals Penetrating Silicon Substrate through SiO₂and Si₃N₄Films by Arsenic Ion Implantation and Annealing