2015
DOI: 10.1016/j.mssp.2015.02.030
|View full text |Cite
|
Sign up to set email alerts
|

An analytical model for optimizing the performance of graphene based silicon Schottky barrier solar cells

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 16 publications
(3 citation statements)
references
References 40 publications
0
3
0
Order By: Relevance
“…( 6 ) and ( 7 ) describes the recombination process where R Lan and R trap stand for the Langevin bimolecular and trap-assisted monomolecular recombination, respectively 125 , 132 . The recombination of two free opposite charges created from different CTEs refers to Langevin bimolecular, and the recombination of a free charge with an immobilized charge at a trap state refers to monomolecular, where the first is defined as 133 : where C Lan = q ( μ n + μ p )/ ε HM , stands for the recombination coefficient predicted by Langevin model, ξ is an additional reduced factor taking into account experimentally derived reduced Langevin factor 134 137 , and n 1 and p 1 are the characteristic electron and hole concentrations, respectively, the product of which is equal to the square of intrinsic carrier density, i.e., n 1 p 1 = n i 2 138 .…”
Section: Semi-analytical Optoelectronic Modelingmentioning
confidence: 99%
“…( 6 ) and ( 7 ) describes the recombination process where R Lan and R trap stand for the Langevin bimolecular and trap-assisted monomolecular recombination, respectively 125 , 132 . The recombination of two free opposite charges created from different CTEs refers to Langevin bimolecular, and the recombination of a free charge with an immobilized charge at a trap state refers to monomolecular, where the first is defined as 133 : where C Lan = q ( μ n + μ p )/ ε HM , stands for the recombination coefficient predicted by Langevin model, ξ is an additional reduced factor taking into account experimentally derived reduced Langevin factor 134 137 , and n 1 and p 1 are the characteristic electron and hole concentrations, respectively, the product of which is equal to the square of intrinsic carrier density, i.e., n 1 p 1 = n i 2 138 .…”
Section: Semi-analytical Optoelectronic Modelingmentioning
confidence: 99%
“…Graphene is a material with many special properties such as high thermal and electrical conductivity, very large hardness (hundreds of times higher than steel) and a large specific surface area. Therefore, this material has been strongly researched for many important application fields such as energy storage, solar cells, transparent electrodes, catalysts, sensors, composite polymer materials, and environmental treatment [3][4][5][6][7][8][9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…Graphene, a flat monolayer of carbon atoms that are packed into 2-D honeycomb lattices, has attracted considerable attention in recent years for its high thermal and electrical conductivity, outstanding mechanical strength, and large specific surface area. Graphene-based materials have the potential for application to several fields, such as energy storage [ 1 , 2 ], transparent electrodes [ 3 ], lithium-ion batteries (LIBs) [ 4 , 5 , 6 , 7 ], solar cells [ 8 ], fuel cells [ 9 , 10 ], air separation [ 11 ], and building materials [ 12 ]. Therefore, there is a need for high-quality, large-scale graphene samples.…”
Section: Introductionmentioning
confidence: 99%