An angle-resolved TOF study on the UV laser-induced etching of InP(100) surface with chlorine

Qin, Qi‐Zong; Lu, P. H.; Zhuang, Zhiquan; Zheng, Qike

doi:10.1016/0009-2614(92)85463-k

Cited by 15 publications

(4 citation statements)

References 15 publications

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“…Halogen etching of III−V semiconductors is of prime importance in the fabrication of fast III−V microelectronic devices. − Among the III−V semiconductors, the InSb semiconductor finds significant application as a detector in the FT-IR spectrometer for near-infrared region . Typically, halogen etching of InSb semiconductor generates SbX 2 as one of the products. Thus the spectroscopic and electronic properties of the dihalides of Sb can be potentially useful in the evaluation of the manufacturing process of these semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Properties and Potential Energy Surfaces of Electronic States of SbCl₂, SbBr₂, SbCl₂⁺ and SbBr₂⁺

Balasubramanian

Latifzadeh-Masoudipour

1999

J. Phys. Chem. A

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Spectroscopic properties and bending potential energy surfaces of 2B1, 2A1, 2A2, 2A2(2Πg), 4A2(4Πg), and 2B2 electronic states of SbCl2 and SbBr2, and three low-lying electronic states of SbCl2 + and SbBr2 +, (1A1, 3B1, 1B1), have been studied with complete active space self-consistent field (CASSCF) followed by multireference singles and doubles configuration interaction (MRSDCI) methods that included nearly 2 million configurations. The bond dissociation and adiabatic ionization energies of SbCl2, SbBr2, SbCl, and SbBr have been computed. The computed properties of these species are extensively compared with other group V dihalides.

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Section: Introductionmentioning

confidence: 99%

Spectroscopic Properties and Potential Energy Surfaces of Electronic States of SbCl₂, SbBr₂, SbCl₂⁺ and SbBr₂⁺

Balasubramanian

Latifzadeh-Masoudipour

1999

J. Phys. Chem. A

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Section: Resultsmentioning

confidence: 99%

“…The electronic excitation cross sections from the ground state X 2 B 1 to the first five excited states 1 2 A 1 , 1 2 B 2 , 2 2 B 2 , 1 4 A 2 , and 2 2 A 1 in 27-state CC approximations for PH 2 are shown in figure 3(a). Except for the transition to the 1 4 A 2 state, the other four transitions are optically allowed. A broad peak at 4.65 eV in the excitation cross section to the 1 2 A 1 state results from a core-excited shape resonance at the 3 B 2 symmetry with a width of 1.18 eV.…”

Section: Resultsmentioning

confidence: 99%

“…Per-fluorinated compounds such as PF 2 are widely used in electrical industries, plasma-assisted fabrication of microcircuits, surface hardening, agriculture, and medicine [3]. PCl, PCl 2 , and PCl 3 are formed during the etching of InP by Cl 2 [4]. Theoretical studies of PCl 2 can be useful to investigate the etching process of III-P semiconductors by Cl 2 .…”

Section: Introductionmentioning

confidence: 99%

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Elastic and inelastic low-energy electron collisions with PH₂, PF₂ and PCl₂ radicals

Wang¹,

Wang²,

Xue³

et al. 2020

J. Phys. B: At. Mol. Opt. Phys.

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Ab initio scattering calculations for low-energy electron collisions with PH2, PF2, and PCl2 are performed using the R-matrix method in this study. The elastic integral, differential, and momentum transfer cross sections and the excitation cross sections from the ground state to the five low-lying electron excited states are presented in the energy region of 0.01–15 eV. The target states are represented by including correlations via a configuration interaction technique. The resonant states are detected and identified. The sensitivity of the results to changes in the theoretical model is checked by comparing predictions from a variety of approximations including static exchange, one state close-coupling (CC), and many-state CC approximations. The similarities and differences among the resonances of these three radicals are discussed.

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Molecular Beam Studies on the Laser‐Enhanced Surface Reaction of GaAs(100) with Chlorine

Qin

Zhang

et al. 1995

J Chinese Chemical Soc

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A cw supersonic Cl2 molecular beam coupled with an angle‐resolved time‐of‐flight (TOF) technique has been used to investigate the laser‐enhanced surface reaction of GaAs(100) with chlorine. The mass and velocity distributions of the major reaction products under 1064 nm laser irradiation have been measured as a function of laser fluence, detection angle, surface temperature and normal component of the translational energy of the incident chlorine molecules. It has been found that increasing both laser fluence and the translational energy of incident chlorine molecules markedly enhance mis surface reaction. The measured flux angular distributions of major reaction products can be fit satisfactorily with a bi‐cosine function. Measurements of the mass and angular distributions of reaction products by a modulated molecular beam mass spectrometry show that the surface temperature effect is obvious for the Cl2/GaAs(100) “dark” thermal reaction. A direct activated dissociative chemisorption is proposed for the mechanism of Cl2 chemisorption on the GaAs(100) surface.

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An angle-resolved TOF study on the UV laser-induced etching of InP(100) surface with chlorine

Cited by 15 publications

References 15 publications

Spectroscopic Properties and Potential Energy Surfaces of Electronic States of SbCl₂, SbBr₂, SbCl₂⁺ and SbBr₂⁺

Spectroscopic Properties and Potential Energy Surfaces of Electronic States of SbCl₂, SbBr₂, SbCl₂⁺ and SbBr₂⁺

Elastic and inelastic low-energy electron collisions with PH₂, PF₂ and PCl₂ radicals

Molecular Beam Studies on the Laser‐Enhanced Surface Reaction of GaAs(100) with Chlorine

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An angle-resolved TOF study on the UV laser-induced etching of InP(100) surface with chlorine

Cited by 15 publications

References 15 publications

Spectroscopic Properties and Potential Energy Surfaces of Electronic States of SbCl2, SbBr2, SbCl2+ and SbBr2+

Spectroscopic Properties and Potential Energy Surfaces of Electronic States of SbCl2, SbBr2, SbCl2+ and SbBr2+

Elastic and inelastic low-energy electron collisions with PH2, PF2 and PCl2 radicals

Molecular Beam Studies on the Laser‐Enhanced Surface Reaction of GaAs(100) with Chlorine

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Product

Resources

About

Spectroscopic Properties and Potential Energy Surfaces of Electronic States of SbCl₂, SbBr₂, SbCl₂⁺ and SbBr₂⁺

Spectroscopic Properties and Potential Energy Surfaces of Electronic States of SbCl₂, SbBr₂, SbCl₂⁺ and SbBr₂⁺

Elastic and inelastic low-energy electron collisions with PH₂, PF₂ and PCl₂ radicals