An Application of Laser Annealing Process in Low-Voltage Planar Power MOSFETs

Chen, Yi; Okada, Tatsuya; Noguchi, Takashi

doi:10.1587/transele.e99.c.601

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2016

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“…[5][6][7] Recently, as laser annealing has attracted attention in and drawn interest to the power semiconductor community for its possible applications, we have also reported an application of green laser annealing process in power MOSFET. 8) In particular, the research on anode activation in processing the back of insulated gate bipolar transistors (IGBTs) is being actively conducted. 9,10) However, no effective laser annealing to activate the shallow channel region in power MOSFETs inside the chip area has been attempted.…”

Section: Introductionmentioning

confidence: 99%

Excimer laser annealing for low-voltage power MOSFET

Chen

Okada

Noguchi

et al. 2016

Jpn. J. Appl. Phys.

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Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.

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