An array-based circuit for characterizing latent Plasma-Induced Damage

Choi, Won Ho; Jain, Pulkit; Kim, C. H.

doi:10.1109/irps.2013.6532005

Cited by 6 publications

(2 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…V th and gate leakage current are increased by PID because defects are generated in a gate oxide. [20][21][22][23][24] V th increases when defects trap carriers. It is called the atomistic trap-based BTI model, [5][6][7][8][9][10] as shown in Fig.…”

Section: Degradation Caused By Plasma-induced Damagementioning

confidence: 99%

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Kishida¹,

Oshima

Yabuuchi

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The degradation of reliability caused by plasma-induced damage (PID) has become a significant concern with the miniaturization of device size. In particular, it is difficult to relieve PID in silicon-on-insulator (SOI) because it contains buried oxide (BOX) layers. In this work, we compare PID between a bulk and a silicon on thin BOX (SOTB), which has BOX layers of less than 10 nm. We measure frequencies of ring oscillators with an antenna structure on a single stage. In the bulk, PID is relieved by first connecting an antenna to a drain because electric charge flows to a substrate. The difference in initial frequency is 0.79% between structures, which cause and relieve PID. SOTB also relieves the same amount of PID. Initial frequencies are affected by PID, but there is no effect of PID on the long-term degradation mainly caused by bias temperature instability (BTI).

show abstract

Section: Degradation Caused By Plasma-induced Damagementioning

confidence: 99%

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Kishida¹,

Oshima

Yabuuchi

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In previous studies, differences between SiO 2 and HK gate dielectrics 25) in terms of antenna shape (e.g., square and comb) 26) and thickness 27) were evaluated. BTI caused by PID was also evaluated in the study of Choi et al 28) Our research focused on PID depending on the type of antenna layer, particularly the second to fifth metal layers (M2-M5) in SSDM 2017.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

Kishida

Furuta

Kobayashi

2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Plasma-induced damage (PID) and bias temperature instability (BTI) are inevitable reliability issues that degrade the performance of transistors. In this study, PID and BTI, depending on the type of antenna layer, are evaluated in current-starved ring oscillators (ROs) to separate degradations in PMOS and NMOS transistors in a 65 nm silicon-on-insulator (SOI) process. Oscillation frequencies of ROs fluctuate with the performance of MOSFET switches between power/ground rails and virtual power/ground nodes. The initial frequencies of ROs with PMOS switches having antennas on upper layers decrease. However, those with NMOS switches become higher than those without PID because high-k dielectrics are damaged by positive charges. The degradation induced by negative BTI (NBTI) in PMOS is 1.5 times larger than that induced by positive BTI (PBTI) in NMOS. However, both NBTI-and PBTI-induced degradations are the same among different antenna layers. The frequency fluctuation caused by PID is converted to threshold voltage shifts by circuit simulations.

show abstract

A test circuit based on a ring oscillator array for statistical characterization of Plasma-Induced Damage

Choi

Satapathy

Keane

et al. 2014

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference

View full text Add to dashboard Cite

We propose a test circuit for characterizing PlasmaInduced Damage (PID) based on a ring oscillator array for collecting high-quality BTI statistics. Two types of ring oscillators, PID protected and PID damaged, with built-in antenna structures were designed to separate PID from other effects. A beat frequency (BF) detection scheme was adopted to achieve high frequency measurement precision (>0.01%) in a short measurement time (>1μs) to prevent unwanted BTI recovery. The proposed circuit enables accurate PID-induced BTI lifetime prediction with different Antenna Ratios (ARs) in any type of device with any topology of antenna structure under any fabrication process. Measured frequency statistics from a 65nm test chip shows a 1.15% shift in the average frequency as a result of PID.

show abstract

An array-based circuit for characterizing latent Plasma-Induced Damage

Cited by 6 publications

References 8 publications

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

A test circuit based on a ring oscillator array for statistical characterization of Plasma-Induced Damage

Contact Info

Product

Resources

About