An artificial optoelectronic synapse based on an InAs nanowire phototransistor with negative photoresponse

Zha, Chaofei; Yan, Xin; Yuan, Xueguang; Zhang, Yangan; Zhang, Xia

doi:10.1007/s11082-021-03217-y

Cited by 6 publications

(5 citation statements)

References 38 publications

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“…The dependence of PPD index and pulse interval time demonstrated the InAs NW synaptic phototransistor was suitable for mimicking human brains. Zha et al further studied the negative photoresponse of InAs NW phototransistor [61]. The synaptic plasticity could be adjusted by gate voltage and light intensity.…”

Section: Nanowire-based Synaptic Transistormentioning

confidence: 99%

Nanowire-based synaptic devices for neuromorphic computing

Chen

Zhao

et al. 2023

Mater. Futures

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The traditional von Neumann structure computers cannot meet the demand of high-speed big data processing, therefore, neuromorphic computing has got a lot of interest in recent years. Brain-inspired neuromorphic computing has the advantages of low power consumption, high-speed and high-accuracy. In human brains, the data transmission and processing are realized through synapses. Artificial synaptic devices can be adopted to mimic the biological synaptic functionalities. Nanowire is an important building block for nanoelectronics and optoelectronics, and many efforts have been made to promote the application of nanowires based synaptic devices for neuromorphic computing. Here, we will introduce the current progress of nanowires based synaptic memristors and synaptic transistors. The applications of nanowires based synaptic devices for neuromorphic computing will be discussed. The challenges faced by nanowires based synaptic devices will be proposed. We hope this perspective will be beneficial for the application of nanowires based synaptic devices in neuromorphic systems.

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Section: Nanowire-based Synaptic Transistormentioning

confidence: 99%

Nanowire-based synaptic devices for neuromorphic computing

Chen

Zhao

et al. 2023

Mater. Futures

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“…Zha et al further studied the optoelectronic synaptic behaviors of InAs NW phototransistor. [131] The device displays negative photoresponse when the incident light intensity is lower. When the light intensity exceeds 1 W cm −2 , the device shows positive photoresponse instead.…”

Section: Visible Optoelectronic Synaptic Devicesmentioning

confidence: 99%

“…[176] 2) All-optical-controlled optoelectronic synapses are beneficial for realizing optical wireless communication. Several materials have demonstrated positive and negative photoresponse, [39,131] that are mostly realized by trap states. The rich surface states of NWs make them show great potential for applications in all-optical-controlled optoelectronic synapses.…”

Section: Conclusion and Challengesmentioning

confidence: 99%

“…A comparison of power consumption of various materials based optoelectronic synaptic devices is shown in Table 2. [37][38][39][40][41][49][50]90,102,103,126,[128][129][130][131][132][133][134][135][136][137][138][139][140][141][142][143] It can be concluded that the NWs optoelectronic synaptic devices have great prospects of being applied to lower power consumption devices.…”

Section: Uv Optoelectronic Synaptic Devicesmentioning

confidence: 99%

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Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Chen

Jiang

et al. 2022

Adv Funct Materials

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Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non‐contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)‐based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires‐based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs‐based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs‐based optoelectronic synaptic devices.

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“…InAs NWs have a direct narrow bandgap (∼0.35 eV) naturally providing significant advantages in IR detection [43,44]. Although InAs NW optical synaptic devices have been demonstrated in the UV and visible light region [21,45], there have been no reports on InAs NW optical synapse in IR region.…”

Section: Introductionmentioning

confidence: 99%

Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor

Shen

Jiang

et al. 2022

Materials

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Optical synapse is the basic component for optical neuromorphic computing and is attracting great attention, mainly due to its great potential in many fields, such as image recognition, artificial intelligence and artificial visual perception systems. However, optical synapse with infrared (IR) response has rarely been reported. InAs nanowires (NWs) have a direct narrow bandgap and a large surface to volume ratio, making them a promising material for IR detection. Here, we demonstrate a near-infrared (NIR) (750 to 1550 nm) optical synapse for the first time based on a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))-coated InAs NW field-effect transistor (FET). The responsivity of the P(VDF-TrFE)-coated InAs NW FET reaches 839.3 A/W under 750 nm laser illumination, demonstrating the advantage of P(VDF-TrFE) coverage. The P(VDF-TrFE)-coated InAs NW device exhibits optical synaptic behaviors in response to NIR light pulses, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF) and a transformation from short-term plasticity (STP) to long-term plasticity (LTP). The working mechanism is attributed to the polarization effect in the ferroelectric P(VDF-TrFE) layer, which dominates the trapping and de-trapping characteristics of photogenerated holes. These findings have significant implications for the development of artificial neural networks.

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An artificial optoelectronic synapse based on an InAs nanowire phototransistor with negative photoresponse

Cited by 6 publications

References 38 publications

Nanowire-based synaptic devices for neuromorphic computing

Nanowire-based synaptic devices for neuromorphic computing

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor

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