An Assessment of Risk of Fracture During Wirebond Over Active Circuits on ULK Dies

Upreti, Kritika; Lin, Hung-Yun; Subbarayan, Ganesh; Jung, Dae Young; Sammakia, Bahgat

doi:10.1109/tcpmt.2015.2466679

Cited by 2 publications

(2 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1. However, the near continuous implementation of new lowk dielectrics with each new technology was not without significant and well documented challenges [107][108][109][110][111] that severely impacted the development of the associated metallization, [112][113][114] patterning, [115][116][117][118][119] and packaging [120][121][122][123] processes needed to fabricate a high yielding metal interconnect. By the mid 2010's, the challenges of implementing new low-k SiOCH ILDs with k ≤ 2.3 had reached a breaking point relative to overall technology development goals for numerous reasons.…”

Section: The End Of Permittivity Scaling?mentioning

confidence: 99%

“…2,3 Similarly, computational modeling had a profound impact on the development of low-k materials via providing insight into both structureproperty relationships [817][818][819][820] and process induced performance and reliability issues. [821][822][823] The optimal use of high-k and low-k dielectrics in both CMOS transistors, Cu interconnects, and pitchdivision patterning stacks was also guided by intensive computational device, 824 thermal-mechanical packaging reliability, 122,123,[162][163][164] and optical proximity correction (OPC) modeling. 147,243,825 Further, computational modeling has already played a significant role in guiding the selection of materials for future beyond CMOS devices and their optimization.…”

Section: The Other M's: Metrology and Modelingmentioning

confidence: 99%

See 1 more Smart Citation

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

show abstract