An atomic ordering based AlInP unicompositional quantum well grown by MOVPE

Tang, Xiaohong; Zhao, Jinghua; Teng, Jinghua; Yong, Anna Marie

doi:10.1016/j.jcrysgro.2012.06.049

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2013

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14, 15 Lee et al demonstrated an order-disorder heterostructure LED using Ga 0.5 In 0.5 P in 1992. 16 Recently, Tang et al 17 have also demonstrated the growth of unicompositional order-disorder heterostructures in Al x In 1-x P. In this work, we have characterized the direct bandgap shift due to ordering in several epitaxial Al x In 1-x P films under a variety of growth conditions and have fabricated LEDs using the order-disorder confinement strategy with high-quality directbandgap Al x In 1-x P.…”

Section: Introductionmentioning

confidence: 91%

Amber-green light-emitting diodes using order-disorder AlxIn1−xP heterostructures

Christian¹,

Beaton²,

Mukherjee³

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

We demonstrate amber-green emission from AlxIn1–xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1–yAs buffer layer and feature electron confinement based on the control of AlxIn1–xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm2. The light output at room temperature from our AlxIn1–xP LED structure emitting at 600 nm is 39% as bright as a GaxIn1–xP LED emitting at 650 nm.

show abstract

Section: Introductionmentioning

confidence: 91%