An atomic-scale and high efficiency finishing method of zirconia ceramics by using magnetorheological finishing

Luo, Hu; Guo, Meijian; Yin, Shu; Chen, Fengjun; Huang, Shuai; Lu, Ange; Guo, Yuanfan

doi:10.1016/j.apsusc.2018.03.091

Cited by 47 publications

(22 citation statements)

References 29 publications

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“…36 This helps the abrasive particles present within the MR fluid to make contact more often with the wafer surface in a more controlled manner and thus resulted in better surface quality. 37 However, on the other hand, with the increased working gap, intensity of magnetic field at the wafer surface becomes low. Thus, abrasive particles become loosely gripped by the CIP chains formed over the upper magnetic disc.…”

Section: Resultsmentioning

confidence: 99%

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

Srivastava

Pandey

2021

Proceedings of the Institution of Mechanical Engineers, Part C:

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In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

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Section: Resultsmentioning

confidence: 99%

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

Srivastava

Pandey

2021

Proceedings of the Institution of Mechanical Engineers, Part C:

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“…Yours Sincerely, Bin Luo of cluster permanent magnets, Meng et al [4] studied the effects of different distribution modes of magnets on polishing efficiency and uniformity. Luo et al [5] proposed a high-efficiency and high-quality MRF method using the permanent magnet excitation unit with a straight air gap, which realized supersmooth surface planarization of zirconia ceramics with surface roughness less than Ra 1 nm.…”

Section: Significancesmentioning

confidence: 99%

Theoretical and Experimental Research on a Novel Method of Cluster Magnetorheological Finishing Based on Array Circular Holes Polishing Disk

Luo

Yan

Chai

et al. 2021

Preprint

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with the high performance of microelectronic and optoelectronic devices, the new generation of optoelectronic wafers is developing in the direction of large size and ultra-thinning, which requires ultra-smooth surfaces with sub-nanometer surface roughness. It puts forward new requirements and challenges for the efficient and ultra-smooth planarization processing of optoelectronic wafers. This paper proposes a novel method of cluster magnetorheological finishing based on array circular holes polishing disk, which can effectively improve the polishing shear force and polishing efficiency. The appropriate polishing shear force and material removal rate are the keys to achieve low roughness and low damage processing of optoelectronic wafers. Therefore, the shear force model of solid particles in magnetorheological finishing fluid is established based on the tribological principle. The material removal rate model is established by combining the polishing shear force model with the velocity model. The correctness of the above model is verified by the rotary dynamometer and repeated single-factor experiments. The errors between theoretical and experimental values of polishing shear force and material removal rate are 8.8% and 10.8%, respectively. The new magnetorheological finishing method can realize the efficient and ultra-smooth planarization of optoelectronic wafers. The established model can theoretically guide the optimization of the surface structure and polishing process of polishing disks.

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“…MRF is an ultra-precision machining process, and has been widely used in fabrication of optical components as a profile modification process [4][5][6][7][8], which removes the material by particles in the slurry [9][10][11][12][13]. In the MRF process, the trajectory and dwell time are calculated based on the measured profiles, in which more material is removed in the peak regions than that in the valley regions.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Magnetorheological Finishing of thin Copper Substrate

Pan

Kang

Zhang

et al. 2020

Preprint

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Thin copper substrates in precision physical experiments are commonly machined by double-sided lapping to obtain high flatness. However, the flatness is limited by the accuracy of lapping plate, process vibration and so on in double-sided lapping process. Hence, magnetorheological finishing (MRF) with its good performance on profile modification is employed to improve the flatness. Nevertheless, thin copper substrates, which are sensitive to the stress, deformed easily with uneven material removal on the surface. In this paper, MRF is conducted on machining thin copper substrate for the first time considering deformation induced by stress. A finite element model is established to evaluate the deformation by residual stress, and the results show that the deformation tends to be more serious with the increase of the material removal. According to the simulation results, the material removal is optimized considering both deformation and efficiency, and a series of experiments are conducted on a Φ100×2.8 mm workpiece to verify the simulation results. The experimental results show that the flatness is further improved from peak to valley (PV) 6.6 μm to PV 2.3 μm with optimized processing parameters. Hence, the feasibility of magnetorheological finishing on thin copper substrate is demonstrated.

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An atomic-scale and high efficiency finishing method of zirconia ceramics by using magnetorheological finishing

Cited by 47 publications

References 29 publications

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

Theoretical and Experimental Research on a Novel Method of Cluster Magnetorheological Finishing Based on Array Circular Holes Polishing Disk

Investigation on Magnetorheological Finishing of thin Copper Substrate

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