An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range

Zhou, Peigen; Chen, Jixin; Yan, Pinpin; Yu, Junsheng; Hou, Debin; Gao, Hao; Wang, Hong

doi:10.1109/tcsi.2021.3127307

Cited by 9 publications

(2 citation statements)

References 27 publications

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“…The tripler core is composed of anti-parallel diode pairs (APDP) [ 13 , 14 ], and the diode is implemented by connecting the drain and source of pHEMT transistors as the cathode with the gate as the anode. Due to the passive structure, sufficient input power is required for the tripler to generate odd-order harmonics while suppressing even-order spurs [ 15 ]. Two 4-finger 10 µm pHEMTs are employed as the APDP in this design in consideration of a trade-off between output power and bandwidth.…”

Section: Circuit Design Methodologymentioning

confidence: 99%

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

et al. 2022

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In this study, we developed a single-channel channel emulator module with an operating frequency covering 66–67 GHz, including a 66–76 GHz wide dynamic range monolithic integrated circuit designed based on 0.1 µm pHEMT GaAs process, a printed circuit board (PCB) power supply bias network, and low-loss ridge microstrip line to WR12 (60–90 GHz) waveguide transition structure. Benefiting from the on-chip multistage band-pass filter integrated at the local oscillator (LO) and radio frequency (RF) ends, the module’s spurious components at the RF port were greatly suppressed, making the module’s output power dynamic range over 50 dB. Due to the frequency-selective filter integrated in the LO chain, each clutter suppression in the LO chain exceeds 40 dBc. Up and down conversion loss of the module is better than 14 dB over the 66–67 GHz band, the measured IF input P1 dB is better than 10 dBm, and the module consumes 129 mA from a 5 V low dropout supply. A low-loss ridged waveguide ladder transition was designed (less than 0.4 dB) so that the output interface of the module is a WR12 waveguide interface, which is convenient for direct connection with an instrument with E-band (60–90 GHz) waveguide interface.

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Section: Circuit Design Methodologymentioning

confidence: 99%

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

et al. 2022

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“…Power amplifiers for automotive radar applications need to be able to operate properly in ambient temperatures ranging from −40 • C to 125 • C [15]. Traditional power amplifiers use voltage biasing.…”

Section: Bias Network With Temperature Compensationmentioning

confidence: 99%

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process

Zhou,

Yan,

Chen

et al. 2023

Micromachines

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This article reports a two-stage differential structure power amplifier based on a 130 nm SiGe process operating at 77 GHz. By introducing a tunable capacitor for amplitude and phase balance at the center tap of the secondary coil of the traditional Marchand balun, the balun achieves amplitude imbalance less than 0.5 dB and phase imbalance less than 1 degree within the operating frequency range of 70–85 GHz, which enables the power amplifier to exhibit comparable output power over a wide operating frequency band. The power amplifier, based on a designed 3-bit digital analog convertor (DAC)-controlled base bias current source, exhibits small signal gain fluctuation of less than 5 dB and saturation output power fluctuation of less than 2 dB near the 80 GHz frequency point when the ambient temperature varies in the range of −40 °C to 125 °C. Benefiting from the aforementioned design, the tested single-path differential power amplifier exhibits a small signal gain exceeding 16 dB, a saturation output power exceeding 18 dBm, and a peak saturation output power of 19.1 dBm in the frequency band of 70–85 GHz.

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Design of a 60–75 GHz Harmonic Feedback Self-Mixing TripIer in 40-nm CMOS Technology

Chen,

Li,

Song

et al. 2024

2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

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An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range

Cited by 9 publications

References 27 publications

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process

Design of a 60–75 GHz Harmonic Feedback Self-Mixing TripIer in 40-nm CMOS Technology

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