An Effect Etching Time on Structure Properties of Nano-Crystalline p-Type Silicon

Abstract

This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

“…The formation of porous silicon layers on crystalline Si wafers using electro-chemical etching ECE. Electro-chemical etching is one of the simplest and most reliable methods used to synthesis porous silicon PS [1][2][3]. Typically, the PS layer is sandwiched between the c-Si substrate and a metallic contact.…”

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

“…The formation of porous silicon layers on crystalline Si wafers using electro-chemical etching ECE. Electro-chemical etching is one of the simplest and most reliable methods used to synthesis porous silicon PS [1][2][3]. Typically, the PS layer is sandwiched between the c-Si substrate and a metallic contact.…”