2016
DOI: 10.1063/1.4941393
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An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

Abstract: The synthesis of large-area monolayer tungsten disulphide (WS2) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS2 crystals using tungsten hexachloride (WCl6) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl6 in ethanol was drop-casted on SiO2/Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 75… Show more

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Cited by 18 publications
(13 citation statements)
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“…Due to the differences in the nucleation density and local environment on the substrate, the dimension distribution of the triangular flakes is quite wide, from tens to hundreds of micrometers, while large triangular WS 2 flakes with edge lengths of ~270 μm are readily obtained on the covering SiO 2 /Si substrate, as shown in Figure 2a. In addition, truncated-triangle, hexagon, and butterfly-shaped flakes are formed on the covering SiO 2 /Si substrate as well (as shown in Supplementary Materials Figure S3), which was observed in previous CVD-grown WS 2 and MoS 2 and explained from the point of the changes in the M:S (M = Mo, W) ratio of the precursors within the growth interface [6,31,42,43].…”
Section: Resultsmentioning
confidence: 72%
“…Due to the differences in the nucleation density and local environment on the substrate, the dimension distribution of the triangular flakes is quite wide, from tens to hundreds of micrometers, while large triangular WS 2 flakes with edge lengths of ~270 μm are readily obtained on the covering SiO 2 /Si substrate, as shown in Figure 2a. In addition, truncated-triangle, hexagon, and butterfly-shaped flakes are formed on the covering SiO 2 /Si substrate as well (as shown in Supplementary Materials Figure S3), which was observed in previous CVD-grown WS 2 and MoS 2 and explained from the point of the changes in the M:S (M = Mo, W) ratio of the precursors within the growth interface [6,31,42,43].…”
Section: Resultsmentioning
confidence: 72%
“…No isolated triangular crystal [11,15,20] is observed and the uniform distribution of WS 2 on the flake is confirmed by Raman spectroscopy, which is instrumental in identifying the nature and the thickness of TMDs [21,22]. The intensity ratio of the inplane vibrational mode E 2g 1 and of the out-of-plane vibrational mode A 1g is indicative of the thickness of WS 2 when using specific excitation wavelengths such as that adopted in this work, i.e., 532 nm [21,23,24]. As visible in figure 1(b), the A E 1g 2g…”
Section: Strong Light Polarization Conservation In Ws 2 Synthesized Omentioning
confidence: 91%
“…1 ∼ 1) [23] (see also supporting information). Local monolayer inclusions are observed especially in proximity and within transfer-generated tears of graphene (which are visible in the optical image in panel (c)).…”
Section: Epitaxial Growth Of Ws 2 On Cvd Graphenementioning
confidence: 99%
“…Chemical vapor deposition (CVD) is the most popular, specifically using elemental sulfur and metal oxides (i.e., MoO x or WO x ) as precursors . Other precursors have also been reported, including metal chlorides (e.g., MoCl 5 and WCl 6 ) or carbonyls (e.g., Mo(CO) 6 or W(CO) 6 ) with hydrogen sulfide gas (H 2 S) . Although successful, these methods become challenging for TMDs that are less stable due to rapid oxidation (e.g., NbSe 2 ) .…”
mentioning
confidence: 99%