An effective combination reaction involved with sputtered and selenized Sb precursors for efficient Sb2Se3 thin film solar cells

Abstract

Sputtering followed by post annealing is extensively used for fabrication of copper indium gallium selenide (CIGS), copper zinc tin sulfide (CZTS) and copper zinc tin sulfur selenide (CZTSSe) thin film solar cells. In this work, Sb 2 Se 3 as an emerging alternative absorber was fabricated by an effective combination reaction of annealing sputtered Sb metallic precursors under Se vapor. Self-assembled growth of Sb 2 Se 3 thin films consist of large grains that across the whole films have been successfully fulfilled via this combination reaction.

Boosting VOC of antimony chalcogenide solar cells: A review on interfaces and defects

“…Also, TAS has been widely used in Sb 2 X 3 to measure the defect information, including both deep-and shallow-level defects. [62][63][64][65][66] In order to obtain the defect density and energy level position within the bandgap in a semiconductor, TAS measurements at various temperatures are usually used. Hu et al systematically identified and characterized the defects in Sb 2 Se 3 solar cells by TAS.…”

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

“…In the last few years, antimony selenide (Sb 2 Se 3 ) semiconductor has received considerable attention as an attractive absorber material in the thin‐film heterojunction photovoltaic device due to its high absorption coefficient (>10 5 cm −1 ), favorable energy bandgap (1–1.2 eV), reasonable carrier mobility, low toxicity, earth‐abundant constituents, inexpensive, low temperature fabrication process, and excellent stability. [ 20–30 ] In the previous works, several experimental [ 20–23,27,31–40 ] and theoretical [ 41–47 ] studies on improving the performances of the Sb 2 Se 3 ‐based solar cells have been reported. There have been numerous experimental Sb 2 Se 3 ‐based heterojunction solar structures, including TiO 2 /Sb 2 Se 3 , [ 18 ] TiO 2 /Sb 2 Se 3 /CuSCN, [ 31 ] CdS/Sb 2 Se 3 , [ 23,32,33,35,36,38–40 ] CdS/Sb 2 Se 3 /PbS, [ 34 ] and CdS/Sb 2 Se 3 /CuSCN, [ 37 ] described to achieve excellent photovoltaic performance.…”

Defect Control for High‐Efficiency Cu2ZnSn(S,Se)4 Solar Cells by Atomic Layer Deposition of Al2O3 on Precursor Film

“…[ 1–6 ] However, poor stability is still a barrier on their road to commercialization. At the same time, the emerging binary Sb‐based compound solar cell has its own advantages and challenges, [ 7–9 ] and its efficiency is currently approaching 10%. [ 10 ] As a substitute in the large‐scale thin‐film production technology of Cu(In,Ga)Se 2 (CIGS), kesterite thin‐film solar cells including Cu 2 ZnSn(S,Se) 4 (CZTSSe) have the same advantages and device structures.…”