2020
DOI: 10.1016/j.vlsi.2020.03.005
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An efficient and reliable MRF-based methodology for designing low-power VLSI circuits

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Cited by 4 publications
(2 citation statements)
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“…In this paper, BER or bit error ratio (BER) has been used to evaluate the ability of cells to store data in the presence of noise parameters. The BER is inversely related to the peak SNR (PSNR) metric, which can be expressed as Equation (5) 21 : BERgoodbreak=No.0.5emof bits in correctly retrieved dataToltal0.25emNo.0.5emof bits in orginal data …”
Section: Simulation Results Comparative Analysis and Supplementary Di...mentioning
confidence: 99%
See 1 more Smart Citation
“…In this paper, BER or bit error ratio (BER) has been used to evaluate the ability of cells to store data in the presence of noise parameters. The BER is inversely related to the peak SNR (PSNR) metric, which can be expressed as Equation (5) 21 : BERgoodbreak=No.0.5emof bits in correctly retrieved dataToltal0.25emNo.0.5emof bits in orginal data …”
Section: Simulation Results Comparative Analysis and Supplementary Di...mentioning
confidence: 99%
“…This section provides a comprehensive assessment of the reliability and immunity against the noise of other bit-cells in the presence of power supply voltage conditions less than 50% of nominal voltage (i.e., 0.2 V) and ambient temperatures around 40 C (to ensure the ineffective of thermal noise on cell operation). 21 To evaluate the reliability and sensitivity of a memory structure against noise interference, the additive white Gaussian noise (AWGN) model with uniform distribution is used to generate noise signals. Figure 9 shows the signals of sensitive nodes in the proposed cell structure in the presence of noise along with the original BL signal in the range of 2 and 16 dB, which results confirm the SRAM cell tolerance of the noise problem.…”
Section: The Sensitivity and Reliability Evaluation In The Presence O...mentioning
confidence: 99%