2022
DOI: 10.1016/j.jallcom.2022.166476
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An efficient Cr-doping strategy to optimize the solution-processed Cu2ZnSn(S,Se)4 solar cells for better optoelectronic performance

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Cited by 10 publications
(2 citation statements)
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“…CZTSSe has been subjected to more than a few cation substitution strategies for the factors mentioned above. Cu–Zn disorder-related defects can be effectively suppressed by substituting Li or Ag for Cu. , Currently, partial substitution of Zn was the most reported, indicating that Mn, Cr, and Co, , and other elements can enter the lattice, partially replacing Zn in part. Ge, Si, and Bi are primarily involved in the study of substituting a cationic for Sn in CZTSSe. , Typically, the Sn-associated deep-level defects have the greatest influence on the V OC of CZTSSe devices, including Sn Zn antisites and related [Cu Zn + Sn Zn ] clusters .…”
Section: Introductionmentioning
confidence: 99%
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“…CZTSSe has been subjected to more than a few cation substitution strategies for the factors mentioned above. Cu–Zn disorder-related defects can be effectively suppressed by substituting Li or Ag for Cu. , Currently, partial substitution of Zn was the most reported, indicating that Mn, Cr, and Co, , and other elements can enter the lattice, partially replacing Zn in part. Ge, Si, and Bi are primarily involved in the study of substituting a cationic for Sn in CZTSSe. , Typically, the Sn-associated deep-level defects have the greatest influence on the V OC of CZTSSe devices, including Sn Zn antisites and related [Cu Zn + Sn Zn ] clusters .…”
Section: Introductionmentioning
confidence: 99%
“…Cu−Zn disorder-related defects can be effectively suppressed by substituting Li or Ag for Cu. 14,15 Currently, partial substitution of Zn was the most reported, indicating that Mn, Cr, and Co, 16,17 and other elements can enter the lattice, partially replacing Zn in part. Ge, Si, and Bi are primarily involved in the study of substituting a cationic for Sn in CZTSSe.…”
Section: ■ Introductionmentioning
confidence: 99%