“…The diamond is then implanted at CuttingEdge Ions LLC with 4 He + ions at three energies (5, 15, and 33 keV) and three doses (2 × 10 12 , 2 × 10 12 , and 4 × 10 12 cm –2 ) respectively to create a uniform layer of vacancies near the diamond surface. , We used Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations to estimate the vacancy distribution depth profile in the diamond substrate (Figure S6a) and found a uniform distribution within ∼ 200 nm beneath the diamond surface facing the 4 He + source. After the implantation we annealed the diamond substrate in an ultravacuum (pressure ≤10 –6 Torr) furnace at 1073 K for 4 h and at 1373 K for 2 h, and then cleaned it for 2 h in a 1:1:1 mixture of nitric, sulfuric, and perchloric acid at 473 K to remove graphite reside at the suraface. ,, This process resulted in ∼200 nm NV layer near the surface with a density of ∼10 ppm, based on the fluorescence measurements in Figure S6b. , …”