An efficient parameter extraction method for GaN HEMT small‐signal equivalent circuit model

Wen, Zhang; Xu, Yuehang; Wang, Changsi; Zhao, Xiaodong; Xu, Ruimin

doi:10.1002/jnm.2127

Cited by 53 publications

(58 citation statements)

References 32 publications

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“…The accuracy of extracted intrinsic elements directly depends on the accuracy of extrinsic elements, as there is an error accumulation problem that the errors of the extrinsic elements will be taken into the process of extracting intrinsic parameters and even the calculation of optimization goal . The accuracy of parasitic elements is especially important.…”

Section: Extraction Proceduresmentioning

confidence: 99%

“…The accuracy of parasitic elements is especially important. In this paper, the extrinsic elements of the SSECM have been extracted by employing the efficient parameter extraction algorithm we proposed in Wen et al The algorithm combines parameter scanning and iteration methods to solve the problem of error accumulation in conventional methods and is implemented in MATLAB programming.…”

Section: Extraction Proceduresmentioning

confidence: 99%

“…By using the iteration method, the algorithm each time uses more accurate element values, thus making the results converge to the optimal value faster, while also eliminating the impact of the extrinsic parameters' error on the extraction of intrinsic parameters. The concrete steps of the algorithm can refer to Wen et al…”

Section: Extraction Proceduresmentioning

confidence: 99%

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A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

Yong-bo

Wang³

et al. 2018

Int J Numerical Modelling

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In this paper, a scalable and multibias parameter extraction method for gallium nitride high electron mobility transistor small‐signal model has been proposed. The main advantage of this method is that the temperature‐dependent access resistances and nonlinear thermal resistance have been taken into account, which makes the extracted access resistances and intrinsic elements more physical and reliable at different bias conditions for various device dimensions. The new modeling method has been validated by comparing the simulated small‐signal S‐parameters with the measured data over a wide range of frequency.

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Section: Extraction Proceduresmentioning

confidence: 99%

Section: Extraction Proceduresmentioning

confidence: 99%

See 1 more Smart Citation

A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

Yong-bo

Wang³

et al. 2018

Int J Numerical Modelling

Self Cite

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“…Hence, all the extrinsic capacitances and inductances are neglected in the noise small‐signal equivalent circuit for the derivation of the total noise PSD at the output drain terminal. The different extrinsic resistances and other small‐signal parameters are extracted as described in Wen et al…”

Section: Comparison Of Induced Gate Noise With Other High‐frequency Nmentioning

confidence: 99%

Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters

Panda

Lenka

2018

Int J Numerical Modelling

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In this paper, the effects of gate induced noise for a gate recessed enhancement‐mode GaN‐based metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) is investigated. To analyze this, a surface potential–based compact model for gate induced noise is developed. The model is validated by comparing with TCAD device simulation results as well as with the available experimental data of GaN HEMT and MOS‐HEMT having different gate lengths and widths from the literature. With the help of the developed model, the effect of oxide thickness on different noise sources is investigated by considering all high‐frequency noise sources including the shot noise resulted from gate leakage current. The effects of gate leakage current on different technology dependent parameters such as oxide thickness and gate length are also investigated. A 2‐port noise equivalent circuit for GaN MOS‐HEMT is designed by considering all high‐frequency noise sources. The different noise parameter models are developed from the Y parameters of the 2‐port noise equivalent circuit and compared with available experimental data of GaN HEMT and MOS‐HEMT from literature. The impact of gate induced noise on all noise parameters is also investigated.

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“…In order to perform an investigation on the noise characteristics in millimeter wave, a 20-element small-signal model 21 is employed in this work. The topology of the small signal is shown in Fig.…”

Section: High Frequency Noise Model Theory and Modelmentioning

confidence: 99%

High Frequency Noise Model of AlGaN/GaN HEMTs

Mao

et al. 2017

ECS J. Solid State Sci. Technol.

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Compared with conventional GaAs HEMTs, the larger gate leakage current and more obviously self-heating effects are two unique macroscopic features in AlGaN/GaN HEMTs. This paper presents the study of the effects brought by temperature-dependent R s and R d on noise performance of AlGaN/GaN HEMT. Based on these studies, a noise model up to 35GHz is established. An improved PRC model is proposed and the noise parameters NF min , R n and opt in the frequency band ranging from 0.1GHz to 35GHz is investigated. The effects brought by gate leakage current have been taken into consideration. Then, noise performance under different ambient temperature has been studied based on the high frequency noise model mentioned above. The parameters in the model except the parasitic inductors and capacitors are all temperature-dependent. With the model, the effects brought by temperature-dependent R s and R d have been studied under four different temperatures by comparing the noise performance in two different conditions. Results show that the temperature-dependent characteristics of these two parasitic resistances will have an effect on NF min and R n while little effect on opt . © The Author Nowadays, the wide bandgap semiconductor device-AlGaN/GaN high electron mobility transistors (HEMTs) have become popular in radar and wireless communication applications. Their advantages including higher output power, efficiency and operating frequency over other devices and their ability in terms of operating in extreme environment have drawn lots of attentions.1 Besides, they are also excellent candidates for the design of low noise amplifier in the perspective of low noise amplifier-power amplifier (LNA-PA). Recently, low noise amplifier based on AlGaN/GaN HEMTs which can provide 18.22dB gain at 2.6GHz while the noise figure is only 0.34dB has been reported.2 Also, LNA design in millimeter wave frequency band will become a focus issue in the age of 5G communication. 3Normal LNA design is based on massive noise measurement which will induce a lot of cost and longer design period. Under this situation, it's essential to establish noise models to reduce the cost and enhance the efficiency of LNA design. Several work has been done in the past few decades revolving around noise modeling. Besides the conventional noise model such as Pucel's model, 4 Pospieszalski model 5 and Fukui model, 6 many other novel modeling techniques including physical base noise models 7 have sprung up. However, the frequency band of model cannot reach up to millimeter wave in most cases. [8][9][10][11][12] Under this circumstance, many noise characteristics in high frequency band especially in millimeter wave can't be investigated.Apart from the modeling technique itself, several novel characteristics especially the gate leakage current effect and the electro-thermal characteristics in noise performance have drawn lots of attention. The gate leakage current is one of the hot topics as a result of its great effect on output characteristics of transistors. 13 In Ref. ...

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An efficient parameter extraction method for GaN HEMT small‐signal equivalent circuit model

Cited by 53 publications

References 32 publications

A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters

High Frequency Noise Model of AlGaN/GaN HEMTs

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