An efficient physics-based gate current calculation by solving space-dependent Boltzmann transport equation

Abstract-In this letter, we investigate warm-electron injection in a double-gate SONOS memory by means of 2-D full-band Monte Carlo simulations of the Boltzmann transport equation. Electrons are accelerated in the channel by a drain-to-source voltage V DS smaller than 3 V, so that programming occurs via electrons tunneling through a potential barrier whose height has been effectively reduced by the accumulated kinetic energy. Particle energy distribution at the semiconductor/oxide interface is studied for different bias conditions and different positions along the channel. The gate current is calculated with a continuum-based postprocessing method as a function of the particle distribution obtained from Monte Carlo simulation. Simulation results show that the gate current increases by several orders of magnitude with increasing drain bias, and warm-electron injection can be an interesting option for programming when short-channel effects prohibit the application of larger drain bias.Index Terms-FinFET memory, nonvolatile memory, SONOS.

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Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation

Giusi

Iannaccone

Mohamed

2008

IEEE Electron Device Lett.

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Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

Sun

Wang

Toyabe

et al. 2006

IEEE Trans. Electron Devices

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Abstract-By applying a fully self-consistent solution of the Schrödinger-Poisson equations, a simple unified approach has been developed in order to study the gate current and gate capacitance of nanoscale-MOS structures with ultrathin dielectric layer. In this paper, the model has been employed to investigate various gate structure and material combinations, thereby demonstrating wide applicability of the present model in the design of nanoscale-MOSFET devices. The results obtained by applying the proposed model are in good agreement with experimental data and previous models in the literature. A new result concerning optimum nitrogen content in HfSiON high-k gate-dielectric structure reported in this paper requires experimental verification through device fabrication.Index Terms-Gate current, high-k dielectric, nanoscale MOSFETs, quantum modeling.

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An efficient physics-based gate current calculation by solving space-dependent Boltzmann transport equation

Cited by 2 publications

References 5 publications

Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation

Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

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