An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si(001) after a chemical mechanical planarization step

Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array

“…A selective wet etching of SiGe over Si is mainly 0741-3106/$31.00 © 2013 IEEE achieved by the mechanism that Ge is oxidized faster than Si [5]. Especially, SC-1 standard cleaning solution can be used for the selective wet etching process [6]. After SC-1 cleaning in a solution of NH 4 OH:H 2 O 2 :deionized water = 1:8:64 for 21 min with 65°C, 200 nm of SiGe is etched, as shown in Fig.…”

Reduced Pressure–Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

“…After the use of Chemical Mecanical Polishing to get rid of the surface cross-hatch (i.e. 1-2 m spatial wavelength undulations running along the 1 1 0 directions), the surfaces of those SiGe virtual substrates are cleaned in an automated wet bench [29].…”

Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe

“…With this growth sequence, the top layer is expected to be almost totally relaxed, with threading dislocations densities (TDDs) of the order of 10 5 cm À2 [7][8][9]. After the use of several chemical mechanical polishing (CMP) steps to get rid of the surface cross-hatch, the surfaces of those SiGe VSs were cleaned in an automated wet bench [13].…”