An eight-terminal Kelvin-tapped bipolar transistor for extracting parasitic series resistances

Taft, R.C.; Plummer, J.D.

doi:10.1109/16.83742

Cited by 18 publications

(11 citation statements)

References 12 publications

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“…The base current is supplied through one of the base contacts (B1) only, and because no current flows through the other contact (B2), this contact can be used for sensing the potential at the edge of the baseemitter diode closest to B2 [5], [6]. Further, and are considered to be bias independent, whereas is considered bias dependent because of current crowding and conductivity modulation in the intrinsic base region.…”

Section: Extraction Proceduresmentioning

confidence: 99%

“…The emitter current is defined positive flowing out of the transistor. Taft and Plummer [5] used this measurement to extract from the slope (2) For unambiguous extraction of the slope must approximately be a constant, which is only true for transistors exhibiting severe current crowding where becomes pinned; i.e., [5]. For transistors with less pronounced current crowding, the extracted will be larger than the true value because -This discrepancy may be relatively large if the transistor does not exhibit sufficient current crowding.…”

Section: A Emitter Resistancementioning

confidence: 99%

“…When both base contacts supply current, the physical resistance should be divided by 12 [5] when inserted into a compact transistor model. These reductions of the physical resistance will be discussed further in Section IV.…”

Section: B Base Resistancementioning

confidence: 99%

“…The new procedure is a combination and refinement of the Taft-Plummer [5] and Ning-Tang [7] methods and an extension of previous work by the present authors [8]. In the emitter resistance extraction, the presence of severe current crowding is not required as in [5]. The method proposed by Ning and Tang [7] is used for extracting the extrinsic base resistance.…”

mentioning

confidence: 96%

“…Furthermore, the parasitic pnp transistor formed by the npn transistor's base, collector, and substrate must be included in the characterization of the emitter resistance, because the transistor is operated in saturation [3], [4]. Taft and Plummer [5] proposed a technique for extracting with the transistor operated in the forward active region. Their method requires a transistor with two separate base contacts (see Fig.…”

mentioning

confidence: 99%

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Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

Linder

Ingvarson

Jeppson

et al. 2000

IEEE Trans. Semicond. Manufact.

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A new procedure for extracting the emitter and base series resistances of bipolar junction transistors is presented. The parameters are extracted from a single measurement in the forward active region on one transistor test structure with two separate base contacts, making it a simple and attractive tool for bipolar transistor characterization. The procedure comprises two methods for extracting the emitter resistance and two for extracting the base resistance. The choice of method is governed by the amount of current crowding or conductivity modulation present in the intrinsic base region. The new extraction procedure was successfully applied to transistors fabricated in an in-house double polysilicon bipolar transistor process and a commercial 0.8-m single polysilicon BiCMOS process. We found that the simulated and measured Gummel characteristics are in excellent agreement and the extracted series resistances agree well with those obtained by means of HF measurements.By adding external resistors to the emitter and base and then extracting the series resistances, we verified that the two base contact test structure offers a simple means of separating the influence of emitter and base series resistances on the transistor characteristics.

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Section: Extraction Proceduresmentioning

confidence: 99%

Section: A Emitter Resistancementioning

confidence: 99%

Section: B Base Resistancementioning

confidence: 99%

mentioning

confidence: 96%

mentioning

confidence: 99%

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Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

Linder

Ingvarson

Jeppson

et al. 2000

IEEE Trans. Semicond. Manufact.

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Physics and Modeling of Bipolar Junction Transistors

Reisch

2003

High-Frequency Bipolar Transistors

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Physics-based compact models provide insight into the relations between the layout, doping profiles and electrical parameters and therefore form a language for communication between process development and circuit design. This chapter looks at the physics of modern integrated bipolar junction transistors with particular emphasis on the derivation of closed-form expressions for their terminal behavior, which are required for the formulation of compact models. On the basis of these results, the most prominent compact models for large-signal and small-signal operation will be considered, together with a presentation of parameter extraction procedures.

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