An electrical switching device controlled by a magnetic field-dependent impact ionization process

Lee, Jinseo; Joo, Sung-Kwan; Kim, Taeyueb; Kim, Ki‐Hyun; Rhie, K.; Hong, Jinki; Shin, Kyung-Hun

doi:10.1063/1.3532105

Cited by 16 publications

(15 citation statements)

References 14 publications

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“…The magnetoresistance approaches to zero in Ohmic regime, which is exactly consistent with the classical equilibrium magneto-electric transport theory 21 . The turn-on voltage, V 0 , grows quasi linearly, from 14 to 104 V, with the increase of magnetic field from 0 to 1 T. Under a magnetic field, the current suppression constrains the field-induced ionization along the transport direction 13 , 18 , 25 , resulting in the postponed of V 0 . In fact, although such phenomena are reported in those pioneer works for silicon wafers 13 , 15 , 17 , 26 , to our best knowledge qualified explanations have not been achieved.…”

Section: Resultsmentioning

confidence: 99%

“…The measurements are performed below the breakdown voltages to ensure the data stability. The inhomogeneous spatial dynamic of ionization and filling is inevitably influenced by a perpendicular magnetic field under a certain voltage, viz., prompting the traverse filling and suppressing the ionization along carrier transport direction 21 , 25 . In our experiment, the magnetoresistance has an excellent linear relationship with magnetic fields under different θ , as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Numerous theories implicate spatial variation of the carrier mobility as being responsible for such an anomalously huge magnetoresistance 19 , 20 , 27 – 30 . The spatial variation can be aroused by several factors, such as macroscopic inclusions 31 , geometric configurations 15 , 17 , 18 , defects 16 , 27 , 32 , and electric field fluctuations 13 – 15 , 18 , 25 , 26 in nonmagnetic materials. The magneto-induced phonon resonance relays on the inelastic inter-Landau-level scatterings 33 .…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

The space charge limited current and huge linear magnetoresistance in silicon

Liu

Wang

Zhang

2018

Sci Rep

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Huge magnetoresistance in space charge regime attracts broad interest on non-equilibrium carrier transport under high electric field. However, the accurate fitting for the current-voltage curves from Ohmic to space charge regime under magnetic fields has not been achieved quantitatively. We conjecture that the localized intensive charge dynamic should be taken into consideration. Here, by introducing a field-dependent dielectric constant, for the first time, we successfully simulate the current-voltage curves of covalent crystal silicon wafers under different magnetic fields (0–1 Tesla). The simulation reveals that the optical phonon, instead of the acoustic phonon, plays a major role for the carriers transport under magnetic fields in space charge regime.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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The space charge limited current and huge linear magnetoresistance in silicon

Liu

Wang

Zhang

2018

Sci Rep

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“…However, it is hard to find the one explaining the influence of magnetic field on the impact ionization. To the best of our knowledge it is only recently that a reasonable pilot model has been proposed for the magnetic field effect and compared with experimental results 1 . The previous model is restricted to a special case: electric transport is quasi-ballistic, and carrier recombination is independent of magnetic field.…”

mentioning

confidence: 99%

Magnetic field dependent impact ionization in InSb

Hong,

Kim,

Joo

et al. 2012

Preprint

Self Cite

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Carrier generation by impact ionization and subsequent recombination under the influence of magnetic field has been studied for InSb slab. A simple analytic expression for threshold electric field as a function of magnetic field is proposed. Impact ionization is suppressed by magnetic field. However, surface recombination is dependent on the polarity of magnetic field: strengthened in one direction and suppressed on the opposite direction. The former contributes quadratic increase to threshold electric field, and the latter gives additional linear dependence on magnetic field. Based on this study, electrical switching devices driven by magnetic field can be designed.

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“…12,13 In electric fields above a certain critical value, electrons acquire the energy equal to the ionization energy and generation of electron-hole pairs occurs. This process abruptly enhances the electric current through a device.…”

Section: Introductionmentioning

confidence: 99%

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

et al. 2017

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We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.

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An electrical switching device controlled by a magnetic field-dependent impact ionization process

Cited by 16 publications

References 14 publications

The space charge limited current and huge linear magnetoresistance in silicon

The space charge limited current and huge linear magnetoresistance in silicon

Magnetic field dependent impact ionization in InSb

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

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