“…While being extensively studied, an underexplored yet extremely interesting property of ZnO is its large optical phonon energy (approximately 72 meV) compared with those of GaAs and (In, Ga)As commonly used for the intersubband optoelectronic devices. Even though the p doping of ZnO remains a huge challenge, it does not hinder ZnO from being a candidate for unipolar devices based on intersubband transitions (ISBTs), such as quantum cascade detectors (QCDs) [11,12], phononpolariton lasers [13], and quantum cascade lasers (QCLs) [14], especially in the THz range at high temperature [15]. In fact, for ISBTs below the optical phonon energy of ZnO [e.g., in the terahertz (THz) range], the population inversion of THz QCLs is significantly enhanced at high temperature due to the suppressed optical phonon emission rate, thus significantly enhancing the high temperature operation of THz QCLs [16,17].…”