2012
DOI: 10.1002/elan.201100489
|View full text |Cite
|
Sign up to set email alerts
|

An Electrochemical Transducer Based on a Pentacene Double‐Gate Thin‐Film Transistor

Abstract: We report an electrochemical transducer based on an organic double-gate transistor. The bottom-gate is given by a p-doped silicon substrate, which is covered by 300 nm thermal oxide. A 20 nm pentacene film acts as the semiconducting layer, and a 50 nm tetratetracontane (TTC) alkane film is used as a top-gate dielectric. An aqueous ionic solution acts as top-gate. We record the transistor transfer characteristics by variation of the electrolyte potential via a Ag/AgCl electrode for various bottom-gate settings.… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

1
8
0

Year Published

2012
2012
2016
2016

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 5 publications
(9 citation statements)
references
References 31 publications
1
8
0
Order By: Relevance
“…The source-drain voltage is set to À0.6 V. The leakage current through the bottom gate dielectric is negligible and for the top gate dielectric, the source-drain current is corrected for the gate leakage current, as previously reported. 17 The transistors can be measured several hours, until nally breakdown of the top gate dielectric occurs.…”
Section: Otft Fabrication and Characterisationmentioning
confidence: 99%
See 1 more Smart Citation
“…The source-drain voltage is set to À0.6 V. The leakage current through the bottom gate dielectric is negligible and for the top gate dielectric, the source-drain current is corrected for the gate leakage current, as previously reported. 17 The transistors can be measured several hours, until nally breakdown of the top gate dielectric occurs.…”
Section: Otft Fabrication and Characterisationmentioning
confidence: 99%
“…16 In the line of sensors employing organic semiconductors, we demonstrated a transducer resembling the architecture of conventional doublegate thin lm transistors (DGTFTs). 17 To realise this experiment, it was essential to identify tetratetracontane (TTC) as a top gate dielectric.…”
mentioning
confidence: 99%
“…Additional control of doping levels also allows to tailor the depletion width with respect to the Debye length 35, 36. We assume that pentacene and C60 used here are unintentionally doped semiconductors, as confirmed for pentacene before in double gate experiments 37–39. In turn, the Fermi levels of pentacene and C60 are expected to align via interface charging, i.e., by formation of depletion zones or accumulation of charges, depending on the detailed values of the respective Fermi levels.…”
mentioning
confidence: 93%
“…46 This effect gives rise to the high resistance of lipid bilayers. 47 This principle also applies to the case of an nonpolar organic semiconductor (e E 80 for water 46 and e E 3 for pentacene 14 ) or nonpolar encapsulation layers such as parylene. In practice, defects, e.g.…”
Section: Resultsmentioning
confidence: 99%
“…In Organic Electrochemical Transistors (OECTs), ions diffuse into the semiconducting film and dope or de-dope the transistor channel. 13 In Organic Field Effect Transistors (OFETs), the charge carrier concentration in the transistor channel is manipulated via capacitive coupling, [14][15][16] resulting in a change of the current through the device. The source drain current I SD of the transistor in saturation mode is given by: 16…”
Section: Introductionmentioning
confidence: 99%