An Electron Density Residual Study of Zinc Oxide

Sawada, Haruo; Wang, Ruiping; Sleight, A.W.

doi:10.1006/jssc.1996.0095

Cited by 113 publications

(74 citation statements)

References 2 publications

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“…From the diffraction pattern (Fig. 6), the unit cell parameters are a = b = 3.242Å, c = 5.176Å, = 120 • (space group P6 3 mc, n • 186) which are in good agreement with the value reported for ZnO [25]. A simulated XRD pattern is also superposed in this figure showing a good agreement between the experimental and the theoretical patterns.…”

Section: Zinc Oxide Powder Synthesissupporting

confidence: 78%

Peculiar effects of microwave sintering on ZnO based varistors properties

Savary

Marinel

Gascoin

et al. 2011

Journal of Alloys and Compounds

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Section: Zinc Oxide Powder Synthesissupporting

confidence: 78%

Peculiar effects of microwave sintering on ZnO based varistors properties

Savary

Marinel

Gascoin

et al. 2011

Journal of Alloys and Compounds

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“…The fitted average bond-lengths, R ZnÀO $ 1.98 Å and R SnÀO $ 2.05 Å , are also in close agreement with previously reported values for wurtzite ZnO 25 and rutile SnO 2 . 26 In addition, our fitting results indicate that Zn and Sn atoms have tetrahedral and octahedral coordination, respectively, as predicted by theoretical calculations.…”

supporting

confidence: 90%

“…In this case, the 1NNs of Zn and Sn atoms contain only oxygen atoms, thus only the single-scattering paths Zn -O and Sn -O are considered. As starting inputs, the relevant EXAFS parameters for the Zn -O and Sn -O paths are estimated using the crystal structures of ZnO (wurtzite, space group P6 3 mc) 25 and SnO 2 (rutile, space group P4 2 /mnm) 26 using the ATOMS and FEFF6 codes implemented in Artemis. 21,27 To reduce the number of fitting parameters, S 2 0 for both Zn (0.84) and Sn (1.00) are obtained by fitting the EXAFS spectra of metallic Zn or Sn thin films collected simultaneously with each sample.…”

mentioning

confidence: 99%

X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

Siah

Lee

et al. 2014

Applied Physics Letters

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We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field-and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes. V C 2014 AIP Publishing LLC. The high mobility and amorphous structure of AMOS enable a faster operation of the devices and elimination of grain-boundary related defects, respectively.2,3 The high electron mobility in the amorphous state originates from the conduction band, which mainly consists of unoccupied Ns (N ! 5) orbitals of metal atoms such as In-5s in a-IGZO. [4][5][6] The spherical symmetry of the s orbitals makes them less prone to form traps and scattering centers when the metal-oxygen-metal bonds are distorted by rotation of metal-oxygen polyhedrons.Amorphous zinc-tin-oxide (a-ZTO) is recently highlighted as a promising candidate material for cost-effective applications, as it is free from toxic and expensive elements (e.g., indium and gallium). Sn] ratio in a-ZTO thin films on device performance suggests a strong correlation between the atomic structure and electronic transport properties of the films. Because amorphous materials can exhibit a continuum of structures, 18 a probe of local order is needed. In this work, we investigate the effect of atomic structure in a-ZTO on electron transport properties by using synchrotron-based X-ray absorption spectroscopy (XAS). We perform EXAFS at the Zn and Sn K-edges to probe the local chemical neighborhoods of Zn and Sn atoms in a-ZTO films, respectively. We find that the Debye-Waller factor, which gives a measure of structural disorder, 19 at the Zn K-edge increases with increasing [Sn] in the films. The structural disorder is further investigated by XANES analysis, which indicates the amorphization around Zn atoms with increasing [Sn] in the films. Disorder as measured by EXAFS and XANES coincides with a decrease in measured electron mobility, suggesting that the degradation in electron mobility may be correlated with structural changes for Zn rich films ([Zn] > 0.5), whereas for Sn rich regions, larger ionic size of Sn dominates the electron mobility.A set of a-ZTO thin films is grown on quartz substrates by ALD at a growth temperature of 120 C. Diethylzinc (DEZ) and a cyclic tin (II) amide ((1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene)Sn(II)) 20 are used as th...

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“…But the "a" value is lower than the reported. The c/a ratio is 1.732 which is higher compared to the bulk ZnO and film 1.60 [18], 1.67 [14,19,20], respectively. The formula ratio of hexagonal lattice is 1.633.…”

Section: Structural Investigationsmentioning

confidence: 90%

Physical investigations on pulsed laser deposited nanocrystalline ZnO thin films

et al. 2012

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The nanocrystalline ZnO thin films were deposited by pulsed laser deposition on quartz and i-Si (100) substrates at different substrate temperatures (473 K-873 K) and at different mixed partial pressures (0.05, 0.01, and 0.5 mbar) of Ar + O 2 . The structural studies from XRD spectra reveals that the films deposited at 0.05 mbar and at lower substrate temperatures were c-axis oriented with predominant (002) crystallographic orientation. At 873 K along with (002) orientation, additional crystallographic orientations were also observed in case of films deposited at 0.01 and 0.5 mbar pressures. The composition of Zinc and Oxygen in ZnO films from EDAX reveals that the films deposited at lower partial pressures were have high at.% of O 2 whereas higher partial pressures and substrate temperatures had high at.% Zn. The surface microstructure of the films show that the films deposited at lower partial pressures (0.05 mbar ) and at lower substrate temperatures (473 K) were found to have nanoparticles of size 15 nm where as films deposited at 873 K have nanorods. The length of these nanorods increases with increasing Ar + O 2 partial pressure to 0.5 mbar. The optical energy gap of the film deposited at lower partial pressure and substrate temperature was 3.3 eV and decrease with the increase of substrate temperatures. The films deposited at 0.5 mbar and at 873 K emitted an intense luminescence at a wavelength of 390 nm. The mea-K. Srinivasarao ( ) · K. Pandurangarao Post graduate department of Physics, P.G. Centre, P.B. Siddartha

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An Electron Density Residual Study of Zinc Oxide

Cited by 113 publications

References 2 publications

Peculiar effects of microwave sintering on ZnO based varistors properties

Peculiar effects of microwave sintering on ZnO based varistors properties

X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

Physical investigations on pulsed laser deposited nanocrystalline ZnO thin films

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