1998
DOI: 10.1088/0957-0233/9/7/020
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An electron optical metrology system for pattern placement measurements

Abstract: The demands on the uncertainties of pattern placement and overlay measurements in lithography are constantly growing due to the continuing reduction of feature size which allows higher density integration. Although nowadays optical projection lithography plays the dominant role in lithography and will continue to do so in the near future other technologies will be developed further in order to replace optical lithography soon after the beginning of the next century. A pattern placement metrology instrument sho… Show more

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Cited by 70 publications
(35 citation statements)
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“…Special care is taken in operation of the CD-SEM to achieve optimum reproducibility of the sample positioning and the imaging process. Figure 13 shows the so-called Electron-Optical Metrology System (EOMS) of the PTB, which combines a low-voltage scanning electron microscopy of the Zeiss ULTRA type and a large vacuum chamber which contains a laser-interferometer controlled 2D precision stage for positioning of larger planar substrates [24]. The EOMS has been applied, for example, for high precision calibration of a grating sample with a nominal pitch of 100 nm [25].…”
Section: Scanning Electron Microscopymentioning
confidence: 99%
“…Special care is taken in operation of the CD-SEM to achieve optimum reproducibility of the sample positioning and the imaging process. Figure 13 shows the so-called Electron-Optical Metrology System (EOMS) of the PTB, which combines a low-voltage scanning electron microscopy of the Zeiss ULTRA type and a large vacuum chamber which contains a laser-interferometer controlled 2D precision stage for positioning of larger planar substrates [24]. The EOMS has been applied, for example, for high precision calibration of a grating sample with a nominal pitch of 100 nm [25].…”
Section: Scanning Electron Microscopymentioning
confidence: 99%
“…The instrumentation used for SEM characterization was a Hitachi 54700 in one case and the PTB used a special metrology low voltage SEM, see e.g. [10]. Both of the DUV commercial optical metrology tools were only basically calibrated for image magnification by pitch measurements, but no customized CD calibration was applied.…”
Section: Measurements On Test and Prototype Masksmentioning
confidence: 99%
“…At PTB scatterometry methods and simulation models are investigated and applied in different wavelength regimes from the visible spectrum down to the EUV range [7][8][9] , see Fig.2 for the newly developed DUV scatterometer. For traceable calibration of linewidths on masks and wafers by scanning electron beam methods, the PTB primarily uses the electron optical metrology system (EOMS) [10] . The analysis of measured SEM line profiles is based on Monte Carlo simulation method, which model the elastic and inelastic scattering events of the primary electrons as well as the generated backscattered and secondary electrons.…”
mentioning
confidence: 99%