An electron paramagnetic resonance study of vanadium-related defects in CdTe:V:Zn

Launay, Jean-Claude; Arnoux, T.; Bardeleben, H. J. von

doi:10.1088/0268-1242/12/1/009

Cited by 9 publications

(5 citation statements)

References 16 publications

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“…The appearance of orthorhombic V 2+ centres of C 2v symmetry may be caused by the formation of the complex (V 2+ Cd + Z Cd ) centres, whose axis is orientated in one of the 110 directions. It should be noted that in an earlier study [21] of EPR spectra in the Cd 1−x Zn x Te:V crystals a complex V 2+ centre having orthorhombic symmetry was revealed. For these crystals Z is the Zn atoms positioned in the near-cationic sites in one of the equivalent 110 directions.…”

Section: Resultsmentioning

confidence: 86%

Optical and photoelectric properties of vanadium-doped Cd1$minus$xHgxTe crystals

Gnatenko

Faryna

Bukivskij

et al. 2002

J. Phys.: Condens. Matter

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Vanadium-doped semi-insulating Cd1−xHgxTe (x < 0.05) n-type crystals were grown by the Bridgman technique for the first time. Studies were carried out of the low-temperature optical and photoelectric properties of Cd1−xHgxTe (x = 0.014), which provided information on the deep anisotropic impurity centres and intrinsic defects. The nature and the position of their energy levels with respect to the crystal energy band were determined. It was shown that for the investigated crystals there are two photogeneration mechanisms of electrons from deep impurity levels: the auto-ionization of electrons from the discrete state, which is in resonance with the conduction band, and their direct photoionization. It was found that the photosensitivity region for Cd0.986Hg0.014Te:V crystals is about 1.3 μ m.

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Section: Resultsmentioning

confidence: 86%

Optical and photoelectric properties of vanadium-doped Cd1$minus$xHgxTe crystals

Gnatenko

Faryna

Bukivskij

et al. 2002

J. Phys.: Condens. Matter

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“…The appearance of orthorhombic V 2+ centres may be caused by the formation of the complex (V 2+ Cd + Z Cd ) centres, whose axis is orientated in one of the 1 1 0 directions. It should be noted that in earlier studies of EPR spectra in the Cd 1−x Zn x Te:V [16] and CdTe:V:Zn [17] crystals a complex (V 2+ Cd +Z Cd ) centre with orthorhombic symmetry was revealed. For those crystals Z seems to be the Zn atoms positioned in the near cationic sites in one of the equivalent 1 1 0 directions.…”

Section: Anisotropic Impurity Centres In CD 1−x Hg X Te:v (Cht-1 Sample)mentioning

confidence: 91%

“…In the case CdTe:V:Zn (N V = N Zn = 10 19 cm −3 ) crystals, both the orthorhombic V 2+ -Zn Cd complex and tetrahedral isolated V 3+ centre were detected by the EPR technique. It was established [17] that the concentration ratio of the two V-related defects…”

Section: Anisotropic Impurity Centres In V-doped Ii-vi Compounds (Epr...mentioning

confidence: 99%

“…In this case the V 3+ ions are recharged to the V 2+ state. However, the following three features, (1) the observation of the PDC spectra at 78 K, (2) the non-sensitivity of their structure to the strain in the crystals, and (3) discovering the orthorhombic and trigonal centres in Cd 1−x Zn x Te:V [16,17] and ZnTe:V [15] crystals, respectively, by the EPR technique, indicate that in the case of Cd 1−x Hg x Te:V the formation of the complex impurity centres is the most probable.…”

Section: Photoionizing Transitions Of the Photoinduced V-related Cent...mentioning

confidence: 99%

“…Other photorefractive studies [7,8] as well as the investigations of EPR, photo-EPR and optical spectra [9][10][11][12][13][14] of CdTe:V crystals were carried out. In addition to CdTe:V the complex investigations of other V-doped II-VI crystals such as ZnTe [15] and the ternary alloy Cd 1−x Zn x Te were made [13,16,17]. It was recently shown [18] that Ti-doped CdTe crystals are also promising photorefractive materials for the near IR region.…”

Section: Introductionmentioning

confidence: 99%

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Nature and energy structure of impurity and intrinsic defects in V-doped Cd_1−xHg_xTe

Gnatenko

Faryna

Bukivskij

et al. 2005

Semicond. Sci. Technol.

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The nature and the energy structure of impurity and intrinsic defects, including the formation of anisotropic impurity centres, are determined in V-doped semi-insulating Cd 1−x Hg x Te (x 0.037) crystals which were grown by the Bridgman technique for the first time. From detailed analysis of the spectral dependence of the photodiffusion current data obtained for the different directions of light propagation in crystals as well as the impurity absorption spectra, we established that for the investigated crystals anisotropic V 2+ and V 3+ centres are formed. Two mechanisms of the electron photogeneration from the ground impurity state to the conduction band (direct photoionization and auto-ionization from the excited state V 2+ ions) are established. It is shown that the efficacy of the auto-ionization of electrons depends on the position of the excited state relative to the conduction band bottom. The photoinduced impurity centres are formed as a result of the illumination of the crystals with the light with energy about 1.50 eV. The nature and photoionization energy of these photoinduced centres are determined. The scheme of the impurity and intrinsic defects energy levels in the energy gap of the investigated crystals is presented.

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New Homoleptic Organometallic Derivatives of Vanadium(III) and Vanadium(IV): Synthesis, Characterization, and Study of Their Electrochemical Behaviour

Alonso

Forniés

García‐Monforte

et al. 2005

Chemistry A European J

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The arylation of [VCl3(thf)3] with LiR(Cl), where R(Cl) is a polychlorinated phenyl group [C6Cl5, 2,4,6-trichlorophenyl(tcp), or 2,6-dichlorophenyl (dcp)] gives four-coordinate, homoleptic organovanadium(III) derivatives with the formula [Li(thf)(4)][V(III)(R(Cl))(4)] (R(Cl) = C(6)Cl(5) (1), tcp (2), dcp (3)). The anion [V(III)(C6Cl5)4]- has an almost tetrahedral geometry, as observed in the solid-state structure of [NBu4][V(C6Cl5)4] (1') (X-ray diffraction). Compounds 1-3 are electrochemically related to the neutral organovanadium(IV) species [V(IV)(R(Cl))4] (R(Cl) = C6Cl5 (4), tcp (5), dcp (6)). The redox potentials of the V(IV)/V(III) semisystems in CH2Cl2 decrease with decreasing chlorination of the phenyl ring (E(1/2) = 0.84 (4/1), 0.42 (5/2), 0.25 V (6/3)). All the [V(IV)(R(Cl))4] derivatives involved in these redox couples could also be prepared and isolated by chemical methods. The arylation of [VCl(3)(thf)(3)] with LiC6F5 also gives a homoleptic organovanadium(III) compound, but with a different stoichiometry: [NBu4]2[V(III)(C6F5)5] (7). In this five-coordinate species, the C6F5 groups define a trigonal bipyramidal environment for the vanadium atom (X-ray diffraction). EPR spectra for the new organovanadium compounds 1-6 are also given and analysed in terms of an elongated tetrahedral structure with C(2v) local symmetry. It is suggested that the R(Cl) groups exert a protective effect towards the vanadium centre.

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An electron paramagnetic resonance study of vanadium-related defects in CdTe:V:Zn

Cited by 9 publications

References 16 publications

Optical and photoelectric properties of vanadium-doped Cd1$minus$xHgxTe crystals

Optical and photoelectric properties of vanadium-doped Cd1$minus$xHgxTe crystals

Nature and energy structure of impurity and intrinsic defects in V-doped Cd_1−xHg_xTe

New Homoleptic Organometallic Derivatives of Vanadium(III) and Vanadium(IV): Synthesis, Characterization, and Study of Their Electrochemical Behaviour

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An electron paramagnetic resonance study of vanadium-related defects in CdTe:V:Zn

Cited by 9 publications

References 16 publications

Optical and photoelectric properties of vanadium-doped Cd1$minus$xHgxTe crystals

Optical and photoelectric properties of vanadium-doped Cd1$minus$xHgxTe crystals

Nature and energy structure of impurity and intrinsic defects in V-doped Cd1−xHgxTe

New Homoleptic Organometallic Derivatives of Vanadium(III) and Vanadium(IV): Synthesis, Characterization, and Study of Their Electrochemical Behaviour

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Nature and energy structure of impurity and intrinsic defects in V-doped Cd_1−xHg_xTe