An electronic synaptic memory device based on four-cation mixed halide perovskite

Abstract

Organic–Inorganic Halide Perovskites (OIHP) have attracted tremendous research interest due to their exceptional semiconducting properties in combination with their facile, solution-based manufacturing performed at low temperatures. Their device applications cover a wide range of domains, while amongst them, photovoltaics is one of the most promising paths towards industrialization. The complex ionic character of perovskites offers a gigantic playground of new dynamic phenomena such as migration of ionic species and vacancies that are strongly coupled to electronic carriers. The interactions between ions and charge carriers are commonly tunable by electrical fields, light, and strain, opening the path for novel device concepts with emerging functionalities. Here, we study the synaptic properties of a four–cation RbCsFAMA perovskite device deployed across an inverted solar cell geometry, as an expansion of Rogdakis et al. Mater. Adv., 2022, 3, 7002 investigations. The device exhibits stable bipolar resistive switching behavior and operates in a low voltage window < ± 1 V, with a high resistance to low resistance state ratio of up to 105. We show that our device can emulate a wide variety of synaptic functions such as paired-pulse facilitation, long-term potentiation, long-term depression, spiking-rate-dependent plasticity, and spike-timing-dependent plasticity.

Flexible Memristive Organic Solar Cell Using Multilayer 2D Titanium Carbide MXene Electrodes

“…Ultimately, this study demonstrated that MXene-based electrodes perform well in flexible OSCs and have great potential for fabricating electrically readable nonvolatile memory and artificial synaptic devices for simultaneous energy harvesting, memory, and neuromorphic computing applications towards future multifunctional integrated device applications. [20,30:4,5]pyrrolo [3, 2 g]thieno [20,30:4,5]thieno[3,2-b]-indole-2,10-diyl)bis(methanylylidene)) bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononi trile) (Y6), [6,6]-Phenyl C71 butyric acid methyl ester (PC 71 BM), chloro-form (CF) and chloronaphthalene were purchased from Sigma Aldrich. The Ti 3 AlC 2 powder was supplied by XF NANO, Jiangsu, China.…”

“…[3] Similarly, Loizos et al deployed a wide variety of synaptic properties of a four-cation RbCsFAMA perovskite device across an inverted solar cell geometry. [6] In addition, a multifunctional device based on n-perovskite/p-spiro-MeOTAD p-n heterojunction diode that enables the integration of photovoltaic, photodetection, and synaptic functionalities in a single cell has been demonstrated. [7] Notably, the functional integration of a ferroelectric oxide thin film and an organic bulk heterojunction (BHJ) to achieve a transistor effect has been reported.…”

Mixed‐Halide Perovskite Memristors with Gate‐Tunable Functions Operating at Low‐Switching Electric Fields

“…Corresponding measurements performed at different scanning rates (50-200 mV s −1 ) are shown in Figure S5c (Supporting Information) indicating a minor shift to higher V set values while the scan rate increases in agreement with previous results in 2T memristors based on the same OIHP active layer. [37,38] with bipolar memristive function at lower V D values (by sweeping V D from +25 V to −25 V) are also shown in Figure S6 (Supporting Information), achieving an HRS/LRS ratio of ≈200 at V set = 7 V. The gate bias effect on I D -V D characteristics measured at high V D is depicted in Figure S7 (Supporting Information) indicating that V G is mainly enhancing the current at the LRS with a weak concurrent enhancement of the HRS/LRS ratio.…”

“…[25,26,28,36] Memristive behavior in OIHP is driven by the migration of I− vacancies that form conductive channels, thus exploiting what is usually a degrading ion migration effect in photovoltaic applications. [34,35,37,38] Light can used as an additional input while these devices typically display photoinduced carrier and ion migration. [39] Optoelectronic memristors, in particular, are intriguing candidates for optical sensing because they provide temporary memory and sensory data.…”

“…Moreover, this hybrid 2T-structure emulated a wide variety of synaptic functions such as paired-pulse facilitation, long-term potentiation, long-term depression, spiking-ratedependent plasticity, and spike-timing-dependent plasticity. [37,38] Memristive devices with three terminals (3T), known as memristive transistors (memtransistors), add a degree of flexibility by decoupling the write and read terminals while providing additional benefits compared to their 2T counterparts. [9,19,20,26] This provides synaptic circuits with concurrent inference and learning behavior toward more sophisticated neuromorphic functions at low voltages.…”