2017
DOI: 10.1088/1361-6439/aa6b41
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An electrostatic charge sensor based on micro resonator with sensing scheme of effective stiffness perturbation

Abstract: A resonant electrostatic charge sensor with high sensitivity based on micro electromechanical systems (MEMS) technology is proposed to measure electric charge. Input charge produces lateral electrostatic force to change effective stiffness of double-ended tuning forks resonator, and leads to a resonant frequency shift. The sensitivity of the charge sensor is 4.4 × 10 −4 Hz fC −2 . The proposed sensing scheme of effective stiffness perturbation has higher sensitivity than the traditional axial strain sensing me… Show more

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Cited by 18 publications
(8 citation statements)
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“…The quadratic responsivity of the electrometer is found out to be ~10 -5 Hz fC -2 after polynomial fitting of the measured data. The responsivity reported here is one of the lowest reported in MEMS based electrometers [40][41][42][43]. This shows that such a technique is potentially capable of detecting very small charges.…”
Section: Mems Electrometermentioning
confidence: 56%
See 3 more Smart Citations
“…The quadratic responsivity of the electrometer is found out to be ~10 -5 Hz fC -2 after polynomial fitting of the measured data. The responsivity reported here is one of the lowest reported in MEMS based electrometers [40][41][42][43]. This shows that such a technique is potentially capable of detecting very small charges.…”
Section: Mems Electrometermentioning
confidence: 56%
“…This effect can be used for applications where the detection of a very small increase in the DC bias is desired. One such application can be in charge sensing or MEMS electrometer [40][41][42][43]. Shift in 6.…”
Section: Mems Electrometermentioning
confidence: 99%
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“…By selecting a lower voltage noise opamp, the further reduction of the noise floor of the readout circuit could be possible for improving charge resolution to subelectrons. The high charge sensitivity of SOG-MEMS electrometer Transistor -Ambient -63k 2014 [18] Transistor -Ambient -6.3k 2017 [6] Resonator SOI 33 mTorr 4.4×10 −4 Hz/f C 2 203k 2015 [4] Resonator SOI 40 mTorr 1.3×10 −3 Hz/f C 2 131k 2008 [3] Resonator SOI 4 mTorr 1.2×10 −3 Hz/f C 2 25k 2018 [7] Resonator SOI Vacuum 7.86×10 −3 Hz/f C 2 16k 2016 [5] Resonator SOI 20 mTorr 6.3×10 −4 Hz/f C 2 7.9k 2018 [8] Resonator shows the potential in low-cost, portable instrumentation systems. The temperature sensitivity, long-term output drift and system integration of the sensor will be investigated in our future work.…”
Section: Discussionmentioning
confidence: 99%