An ellipsometric study of relaxation-induced changes in the optical characteristics and structural inhomogeneity of As2S3 glassy thin films

Kozak, M. I.; Zhikharev, V. N.; Loya, Vasyl Y.; Studenyak, I.P.; Шпак, І. І.; Turok, I. I.

doi:10.1134/s1063785006050257

Cited by 2 publications

(1 citation statement)

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“…It is seen that the refractive index of the chalcogenide films varies in wide diapason, that is, from 2.05 to 3.15 for GeS 2 and As 2 Se 3 , respectively. The results for and of the films from As-S=(Se) systems are in agreement with the data reported in the literature [29,[48][49][50], With the substitution of Se for S in thin As-S-Se layers, the refractive index of the layers increases and the highest value is reached for As 2 Se 3 film. The changes in the optical parameters of thin As-Se films under illumination are more pronounced compared to those in As-S layers.…”

Section: Resultssupporting

confidence: 90%

Ellipsometric Characterization of Thin Films from Multicomponent Chalcogenide Glasses for Application in Modern Optical Devices

Todorov

Tasseva

Lozanova

et al. 2013

Advances in Condensed Matter Physics

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A review is given on the application of the reflectance ellipsometry for optical characterization of bulk materials and thin films with thickness betweenλ/20 and 2λ(atλ=632.8 nm). The knowledge of the optical constants (refractive index,n, and extinction coefficient,k) of thin films is of a great importance from the point of view of modelling and controlling the manufacture of various optical elements, such as waveguides, diffraction gratings, and microlenses. The presented results concern the optical properties of thin films from multicomponent chalcogenide glasses on the base of As2S3and GeS2determined by multiple-angle-of-incidence ellipsometry and regarded as a function of the composition and thickness. The homogeneity of the films is verified by applying single-angle calculations at different angles. Due to decomposition of the bulk glass during thermal evaporation, an optical inhomogeneity of the thin As (Ge)-S-Bi(Tl) films is observed. The profile ofnin depth of thin As-S-Tl (Bi) films was investigated by evaporation of discrete layers. It is demonstrated that homogenous layers from the previous compounds with controlled composition can be deposited by coevaporation of As2S3and metals or their compounds (Bi, Tl, In2S3).

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Section: Resultssupporting

confidence: 90%