An enhanced alneal process to produce SRV &lt; 1 cm/s in 1 Ω cm n-type Si

Collett, Katherine A.; Bonilla, Ruy S.; Hamer, Phillip; Bourret‐Sicotte, Gabrielle; Lobo, Richard; Kho, Teng; Wilshaw, Peter R.

doi:10.1016/j.solmat.2017.06.022

Cited by 25 publications

(21 citation statements)

References 43 publications

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“…. Recently, Collett et al reported an enhanced alneal process whereby charges are introduced into the oxide film at the same time hydrogenation takes place. They demonstrated the introduction of charged ionic species which provide field‐effect passivation to the underlying silicon, and reported SRV of 0.5 cm s −1 on n‐type 1 Ωcm silicon, surpassing that achieved by Kerr and Cuevas.…”

Section: Materials and Methods For Silicon Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

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235

161

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

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Section: Materials and Methods For Silicon Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

Self Cite

235

161

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“…The Auger recombination in our carrier-transport calculations is implemented using the state-of-the-art improved Auger model 11 . The surface recombination at the Si − SiO 2 interface is implemented using a microscopic, SRH recombination statistics-based model 46 (more details are given in the “Methods” section) that complies with the experimental data of 11,47–49 . In all our computations involving inverted-pyramid PhC solar cells, the contact SRVs are chosen to be 10 cm / s .…”

Section: Solar Cell Geometry and Numerical Detailsmentioning

confidence: 99%

Beyond 30% Conversion Efficiency in Silicon Solar Cells: A Numerical Demonstration

Bhattacharya

John

2019

Sci Rep

158

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We demonstrate through precise numerical simulations the possibility of flexible, thin-film solar cells, consisting of crystalline silicon, to achieve power conversion efficiency of 31%. Our optimized photonic crystal architecture consists of a 15 μm thick cell patterned with inverted micro-pyramids with lattice spacing comparable to the wavelength of near-infrared light, enabling strong wave-interference based light trapping and absorption. Unlike previous photonic crystal designs, photogenerated charge carrier flow is guided to a grid of interdigitated back contacts with optimized geometry to minimize Auger recombination losses due to lateral current flow. Front and back surface fields provided by optimized Gaussian doping profiles are shown to play a vital role in enhancing surface passivation. We carefully delineate the drop in power conversion efficiency when surface recombination velocities exceed 100 cm/s and the doping profiles deviate from prescribed values. These results are obtained by exact numerical simulation of Maxwell’s wave equations for light propagation throughout the cell architecture and a state-of-the-art model for charge carrier transport and Auger recombination.

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“…This concentration was selected as it was shown in Fig 6 to cause an interface charge of ~1.7 × 10 12 q/cm 2 , and in Fig 3 produced the highest effective lifetime. This quantity of interface charge has also been shown to provide outstanding effective lifetimes and FEP previously [18].…”

Section: B Anneal Temperature and Timementioning

confidence: 91%

“…This concentration was confirmed using Thermally Stimulated Ionic Conduction (TSIC) measurements of a metal-oxide-semiconductor (MOS) structure fabricated from the ion deposited oxide, using ebeam deposited aluminium as the gate metal. Details of TSIC can be found in [18], [19].…”

Section: Experimental Methodsmentioning

confidence: 99%