2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
DOI: 10.1109/relphy.2003.1197801
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An enhanced erase mechanism in flash memory and its implication on endurance reliability

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“…The threshold voltage shift between the two states is large enough to be identified as two discrete levels by the sense amplifier. By using a novel erase mechanism based on increased hole generation via impact ionization, fast erase operations can be obtained, overcoming the slow erase characteristics described above [20]. These simulations show that the NVM cells with a nanowire cylindrical GAA structure and HfO 2 trapping layer could be attractive for next-generation fast memory cells.…”
Section: Numerical Simulation Analysis and Designmentioning
confidence: 83%
“…The threshold voltage shift between the two states is large enough to be identified as two discrete levels by the sense amplifier. By using a novel erase mechanism based on increased hole generation via impact ionization, fast erase operations can be obtained, overcoming the slow erase characteristics described above [20]. These simulations show that the NVM cells with a nanowire cylindrical GAA structure and HfO 2 trapping layer could be attractive for next-generation fast memory cells.…”
Section: Numerical Simulation Analysis and Designmentioning
confidence: 83%